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silicon carbide, As an experienced group we also accept customized order and make it same as your picture or sample specifying specification and customer design packing. The main goal of our company is to build up a satisfactory memory to all customers, and establish a long term win-win business relationship. Choose us, we always wait for your appearance!

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  • 8 Inch N-type SiC Wafer

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    In the landscape of wide bandgap semiconductor materials, silicon carbide (SiC) has emerged as a highly regarded material, particularly excelling in the high-power conversion domain.

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    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

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    In their newly released annual report, TSMC Chairman Deyin Liu and CEO Chieh-Jia Wei revealed the progress related to the 2nm process.

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