English
Home > Products > Silicon Carbide Etching Plate

China Silicon Carbide Etching Plate Manufacturers, Suppliers, Factory

We've been committed to offering easy,time-saving and money-saving one-stop purchasing service of consumer for Silicon Carbide Etching Plate,Etch Carrier(ICP/PSS),Silicon Carbide Etching Carrier,SiC processing Tray,Wafer Etching, We can do your customized order to meet your own satisfactory! Our company sets up several departments, including production department, sales department, quality control department and sevice center, etc.
Silicon Carbide Etching Plate, We always adhere to follow the honesty, mutual benefit, common development, after years of development and the tireless efforts of all staff, now has perfect export system, diversified logistics solutions, extensive meet customer shipping, air transport, international express and logistics services. Elaborate one-stop sourcing platform for our customers!

Related Products

Hot Products

  • SiC Coating Ring

    SiC Coating Ring

    Semicorex SiC Coating Ring is a critical component in the demanding environment of semiconductor epitaxy processes. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
  • Graphite Rod Heater

    Graphite Rod Heater

    Semicorex Graphite Rod Heater is a high-performance heating element designed for uniform high-temperature generation inside vacuum furnaces. Choose Semicorex for its expertise in precision-engineered graphite solutions, delivering superior thermal stability and long-lasting performance tailored to your industrial needs.*
  • Quartz Diffusion Tube

    Quartz Diffusion Tube

    Semicorex Quartz Diffusion Tube is indispensable in the semiconductor wafer manufacturing industry, particularly during the critical processes of thermal oxidation and annealing.**
  • Silicon Epitaxy Susceptors

    Silicon Epitaxy Susceptors

    You can rest assured to buy Silicon Epitaxy Susceptors from our factory. Semicorex's Silicon Epitaxy Susceptor is a high-quality, high-purity product used in the semiconductor industry for epitaxial growth of the wafer chip. Our product has a superior coating technology that ensures the coating is present on all surfaces, preventing peeling off. The product is stable at high temperatures up to 1600°C, making it suitable for use in extreme environments.
  • Crucible for Monocrystalline Silicon

    Crucible for Monocrystalline Silicon

    Semicorex is committed to manufacturing and supplying Crucible for Monocrystalline Silicon that features exceptional purity, superior thermal properties, mechanical strength, and compatibility with established growth methods, making it indispensable for meeting the stringent demands of the electronics and solar industries.**
  • Silicon Carbide Boat Holder

    Silicon Carbide Boat Holder

    Semicorex Silicon Carbide Boat Holder is a specialized product crafted from SiC material, meticulously designed for applications in industries such as photovoltaics, electronics, and semiconductors. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

  • Quartz products in semiconductor applications

    In the semiconductor industry, quartz is widely used, and high-purity quartz products are even more important consumables in wafer production. The production of silicon single crystal crucibles, crystal boats, diffusion furnace core tubes, and other quartz components must use high-purity quartz glass products.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

  • AlN crystal growth by PVT method

    The third generation of wide bandgap semiconductor materials, including gallium nitride (GaN), silicon carbide (SiC), and aluminum nitride (AlN), exhibit excellent electrical, thermal, and acousto-optical properties. These materials address the limitations of the first and second generation of semiconductor materials, significantly advancing the semiconductor industry.

  • What is the Difference Between Graphitization and Carbonization

    In conclusion, both graphitization and carbonization are industrial processes that involve carbon either as a reactant or a product. Carbonization refers to the process of converting organic matter into carbon, while graphitization involves transforming carbon into graphite. Therefore, carbonization is classified as a chemical change, whereas graphitization is recognized as a microstructural change.

Related Search

Silicon Carbide Etching Plate Holder

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept