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    SiC Inlet Rings

    Semicorex SiC Inlet Rings are high-performance silicon carbide components engineered for semiconductor processing equipment, offering exceptional thermal stability, chemical resistance, and precision machining. Choosing Semicorex means gaining access to reliable, customized, and contamination-free solutions trusted by leading semiconductor manufacturers.*
  • CVD-SiC Showerhead

    CVD-SiC Showerhead

    Semicorex CVD-SiC showerhead provides durability, excellent thermal management, and resistance to chemical degradation, making it a suitable choice for demanding CVD processes in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD SiC Coated Graphite Susceptor

    CVD SiC Coated Graphite Susceptor

    Semicorex CVD SiC Coated Graphite Susceptor, is a specialized tool used in the handling and processing of semiconductor wafers. The susceptor plays a crucial role in facilitating the growth of thin films, epitaxial layers, and other coatings on substrates with precise control over temperature and material properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Rigid Insulation

    Rigid Insulation

    Semicorex Rigid Insulation is a high-performance short fiber hard felt, specially developed for thermal management in epitaxy equipment. Choosing Semicorex means choosing proven expertise, premium materials, and customized solutions that ensure the highest purity, reliability, and efficiency for your semiconductor manufacturing processes.*
  • MOCVD Epitaxy Susceptor

    MOCVD Epitaxy Susceptor

    Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
  • Hard Composite Carbon Fiber Felt

    Hard Composite Carbon Fiber Felt

    Semicorex provides Hard Composite Carbon Fiber Felt, a rigid insulation material based on carbon fibers. We have been manufacturer and supplier of graphite materials for many years. Our High Purity Graphite Rigid Felt has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • What is Semiconductor Ion Implantation Technology?

    In semiconductor manufacturing, ion implantation involves using high-energy accelerators to inject specific impurity atoms, such as arsenic or boron, into a silicon substrate.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

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