- English
- Español
- Português
- русский
- Français
- 日本語
- Deutsch
- tiếng Việt
- Italiano
- Nederlands
- ภาษาไทย
- Polski
- 한국어
- Svenska
- magyar
- Malay
- বাংলা ভাষার
- Dansk
- Suomi
- हिन्दी
- Pilipino
- Türkçe
- Gaeilge
- العربية
- Indonesia
- Norsk
- تمل
- český
- ελληνικά
- український
- Javanese
- فارسی
- தமிழ்
- తెలుగు
- नेपाली
- Burmese
- български
- ລາວ
- Latine
- Қазақша
- Euskal
- Azərbaycan
- Slovenský jazyk
- Македонски
- Lietuvos
- Eesti Keel
- Română
- Slovenski
- मराठी
- Srpski језик
Inductively-Coupled Plasma (ICP)
Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
Send Inquiry
Product Description
Need a wafer carrier that can handle high-temperature, harsh chemical environments? Look no further than Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) . Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
Contact us today to learn more about our SiC susceptor for Inductively-Coupled Plasma (ICP).
Parameters of susceptor for Inductively-Coupled Plasma (ICP)
|
Main Specifications of CVD-SIC Coating |
||
|
SiC-CVD Properties |
||
|
Crystal Structure |
FCC β phase |
|
|
Density |
g/cm ³ |
3.21 |
|
Hardness |
Vickers hardness |
2500 |
|
Grain Size |
μm |
2~10 |
|
Chemical Purity |
% |
99.99995 |
|
Heat Capacity |
J·kg-1 ·K-1 |
640 |
|
Sublimation Temperature |
℃ |
2700 |
|
Felexural Strength |
MPa (RT 4-point) |
415 |
|
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
|
Thermal Expansion (C.T.E) |
10-6K-1 |
4.5 |
|
Thermal conductivity |
(W/mK) |
300 |
Features of silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP)
- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion
Hot Tags: Inductively-Coupled Plasma (ICP), China, Manufacturers, Suppliers, Factory, Customized, Bulk, Advanced, Durable
Product Tag
Related Category
Barrel Susceptor
PSS Etching Carrier
ICP Etching Carrier
RTP Carrier
MOCVD Susceptor
Monocrystalline Silicon
LED Epitaxial Susceptor
SiC Epitaxy
GaN on SiC Epitaxy
Pancake Susceptor
Si Epitaxy
Photovoltaic Parts
Send Inquiry
Please feel free to give your inquiry in the form below. We will reply you in 24 hours.
