China Porous Graphite Manufacturers, Suppliers, Factory

Most SiC substrate producers nowadays use a crucible design that involves a porous graphite cylinder for the hot field process. The process involves placing high-purity SiC particles between the graphite crucible wall and the porous graphite cylinder while deepening the crucible and increasing its diameter. This increases the evaporation area of the feedstock while also increasing the charge volume.

The new process solves the problem of crystal defects that arise due to the recrystallization of the upper part of the raw material as the source material surface grows, which affects the flux of the sublimated material. Moreover, the new process reduces the sensitivity of the temperature distribution of the raw material area to crystal growth, stabilizes the mass transfer efficiency, reduces the influence of carbon inclusions during the late stage of growth, and further improves the quality of SiC crystals. In addition, the new process adopts a seedless crystal tray fixation method that does not stick to the seed crystals, thereby freeing thermal expansion and facilitating stress relief. This new process optimizes the thermal field and greatly improves the efficiency of expansion.

It is important to note that the quality and yield of SiC single crystals obtained by this new process heavily depend on the physical properties of the crucible graphite and porous graphite. However, supply in the market is currently very short relative to the expanding demand.

Key Features of Porous Graphite:

Suitable pore size distribution;

Sufficiently high porosity;

Mechanical to meet processing and use requirements.

Semicorex offers customized high-quality porous graphite products according to your requirements.