TaC coating graphite is created by coating the surface of a high-purity graphite substrate with a fine layer of tantalum carbide by a proprietary Chemical Vapor Deposition (CVD) process.
Tantalum carbide (TaC) is a compound that consists of tantalum and carbon. It has metallic electrical conductivity and an exceptionally high melting point, making it a refractory ceramic material known for its strength, hardness, and heat and wear resistance. The melting point of Tantalum Carbides peaks at about 3880°C depending on purity and has one of the highest melting points among the binary compounds. This makes it an attractive alternative when higher temperature demands exceed performance capabilities used in compound semiconductors epitaxial processes such as MOCVD and LPE.
Material data of Semicorex TaC Coating
Projects |
Parameters |
Density |
14.3 (gm/cm³) |
Emissivity |
0.3 |
CTE (×10-6/K) |
6.3 |
Hardness (HK) |
2000 |
Resistance (Ohm-cm) |
1×10-5 |
Thermal Stability |
<2500℃ |
Graphite Dimension Change |
-10~-20um (reference value) |
Coating Thickness |
≥20um typical value(35um±10um) |
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The above are typical values |
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Semicorex TaC Coated Porous graphite, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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