TaC coating graphite is created by coating the surface of a high-purity graphite substrate with a fine layer of tantalum carbide by a proprietary Chemical Vapor Deposition (CVD) process.
Tantalum carbide (TaC) is a compound that consists of tantalum and carbon. It has metallic electrical conductivity and an exceptionally high melting point, making it a refractory ceramic material known for its strength, hardness, and heat and wear resistance. The melting point of Tantalum Carbides peaks at about 3880°C depending on purity and has one of the highest melting points among the binary compounds. This makes it an attractive alternative when higher temperature demands exceed performance capabilities used in compound semiconductors epitaxial processes such as MOCVD and LPE.
Material data of Semicorex TaC Coating
Projects |
Parameters |
Density |
14.3 (gm/cm³) |
Emissivity |
0.3 |
CTE (×10-6/K) |
6.3 |
Hardness (HK) |
2000 |
Resistance (Ohm-cm) |
1×10-5 |
Thermal Stability |
<2500℃ |
Graphite Dimension Change |
-10~-20um (reference value) |
Coating Thickness |
≥20um typical value(35um±10um) |
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The above are typical values |
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Semicorex CVD Coating Wafer Holder is a high-performance component with a tantalum carbide coating, designed for precision and durability in semiconductor epitaxy processes. Choose Semicorex for reliable, advanced solutions that enhance your production efficiency and ensure superior quality in every application.*
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Read MoreSend Inquiry