China Silicon Carbide Epitaxial Sheet Tray Manufacturers, Suppliers, Factory

Semicorex is a large-scale manufacturer and supplier of SiC Coated Barrel Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.

Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.

Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We have been manufacturer and supplier of Deep-UV LED Epitaxial Susceptor for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

Semicorex TaC Coating Ring stands as a pivotal component in the realm of monocrystal growth within the thermal field. Crafted with precision and innovation, this specialized guide ring plays a crucial role in the intricate process of monocrystalline material production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.

Semicorex SiC Carrier for ICP is a high-performance wafer holder made of SiC-coated graphite, designed specifically for use in inductively coupled plasma (ICP) etching and deposition systems. Choose Semicorex for our world-leading anisotropic graphite quality, precision small-batch manufacturing, and uncompromising commitment to purity, consistency, and process performance.*

SiC-coated graphite MOCVD susceptors are the essential components used in Metal-organic chemical vapor deposition (MOCVD) equipment, which are responsible for holding and heating wafer substrates. With their superior thermal management, chemical resistance, and dimensional stability, SiC-coated graphite MOCVD susceptors are regarded as the optimal option for high-quality wafer substrate epitaxy. In the wafer fabrication, the MOCVD technology is used to construct epitaxial layers on the surface of wafer substrates, preparing for the fabrication of advanced semiconductor devices. Since the growth of epitaxial layers is affected by multiple factors, the wafer substrates cannot be directly placed in the MOCVD equipment for deposition. SiC-coated graphite MOCVD susceptors are required to hold and heat the wafer substrates, creating stable thermal conditions for the growth of epitaxial layers. Therefore, the performance of SiC-coated graphite MOCVD susceptors directly determines the uniformity and purity of thin film materials, which in turn affects the manufacturing of advanced semiconductor devices.