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China Sintered Silicon Carbide Ceramic Manufacturers, Suppliers, Factory

It is a great way to further improve our products and repair. Our mission is always to create innovative products to prospects with a superior expertise for Sintered Silicon Carbide Ceramic,Robot Arm,Ceramic Arm,Semiconductor Wafer Handling Robots,Ceramic Robot Finger, Adhering on the company principle of mutual gains, we have won superior popularity amid our shoppers because of our excellent products and services, excellent products and aggressive selling prices. We warmly welcome shoppers from home and overseas to cooperate with us for common achievements.
Sintered Silicon Carbide Ceramic, Our company absorbs new ideas, strict quality control, a full range of service tracking, and adhere to make high-quality products. Our business aims to "honest and trustworthy, favorable price, customer first", so we won the trust of the majority of customers! If you are interested in our items and services, remember to do not hesitate to contact us!

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  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Knowing MOCVD

    MOCVD is a new vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxial growth (VPE).

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

  • Application of carbon fiber composite

    Carbon fiber (CF) is a type of fibrous material that contains over 95% carbon.

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