China Crucible Silicon Carbide Manufacturers, Suppliers, Factory

Silicon carbide (SiC) ceramic is a type of advanced ceramic material known for its exceptional properties and wide range of applications. It is composed of silicon (Si) and carbon (C) atoms arranged in a crystal lattice structure, resulting in a hard and strong material with excellent thermal and electrical conductivity.

The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.

The surface of the gas distribution plate features hundreds or even thousands of tiny, precisely arranged holes, resembling a finely woven neural network.

The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.