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China Silicon Carbide Wafer Carrier Manufacturers, Suppliers, Factory

We've got a remarkably efficient crew to deal with inquiries from clients. Our aim is "100% purchaser satisfaction by our item high-quality, selling price & our crew service" and appreciate an excellent popularity amid consumers. With quite a few factories, we could present a wide variety of Silicon Carbide Wafer Carrier,Etch Carrier(ICP/PSS),PSS-Based LED,Wafer Etch Carrier for PSS,Sapphire & GaN Plasma Etching, As an experienced group we also accept tailored orders. The main aim of our corporation is always to develop a satisfying memory for all shoppers, and set up a long-term win-win business partnership.
Silicon Carbide Wafer Carrier, Our tenet is "integrity first, quality best". We now have confidence in providing you with excellent service and ideal goods. We sincerely hope we can establish win-win business cooperation with you in the future!

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    Semicorex durable focus rings for semiconductor processing are designed to withstand the extreme environments of plasma etch chambers used in semiconductor processing. Our focus rings are made of high-purity graphite coated with a dense, wear-resistant silicon carbide (SiC) coating. The SiC coating has high corrosion and heat resistance properties, as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process to improve the service life of our focus rings.
  • SiC Coated RTP Carrier Plate for Epitaxial Growth

    SiC Coated RTP Carrier Plate for Epitaxial Growth

    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • TaC Coated Guide Ring

    TaC Coated Guide Ring

    Semicorex TaC Coated Guide Ring, a pinnacle of innovation in SiC (Silicon Carbide) single crystal growth furnaces. Meticulously designed to meet the exacting demands of the semiconductor industry, this guide ring promises to redefine your crystal growth processes with unparalleled precision and reliability.
  • Silicon Carbide Tray

    Silicon Carbide Tray

    Semicorex Silicon Carbide Tray is built to withstand extreme conditions while ensuring remarkable performance. It plays a crucial role in the ICP etching process, semiconductor diffusion, and the MOCVD epitaxial process.
  • Tantalum Carbide Guide Ring

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    Semicorex Tantalum Carbide Guide Ring is a graphite ring coated with tantalum carbide, used in silicon carbide crystal growth furnaces for seed crystal support, temperature optimization, and enhanced growth stability. Choose Semicorex for its advanced materials and design, which significantly improve the efficiency and quality of crystal growth.*
  • Wafer Process Heater

    Wafer Process Heater

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Wafer Process Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
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  • What is the advantage of silicon carbide?

  • How to do CMP Process

    In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • Substantial growth of the SiC coated graphite susceptor market

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