Silicon carbide ceramic (SiC) is an advanced ceramic material containing silicon and carbon. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics. Semicorex supplies custom silicon carbide ceramics as your requiring.
Applications
With silicon carbide ceramics the material properties remain constant up to temperatures above 1,400°C. The high Young’s modulus > 400 GPa ensures excellent dimensional stability.
A typical application for silicon carbide components is dynamic sealing technology using friction bearings and mechanical seals, for instance in pumps and drive systems.
With the advanced properties, silicon carbide ceramics are also ideal for use in the semiconductor industry.
Wafer Boats →
Semicorex Wafer Boat is made of sintered silicon carbide ceramic, which has good resistance to corrosion and excellent resistance to high temperatures and thermal shock. Advanced ceramics deliver excellent thermal resistance and plasma durability while mitigating particles and contaminants for high-capacity wafer carriers.
Reaction sintered silicon carbide
Compared with other sintering processes, the size change of reaction sintering during the densification process is small, and products with precise dimensions can be produced. However, the presence of a large amount of SiC in the sintered body makes the high temperature performance of reaction sintered SiC ceramics worse.
Pressureless sintered silicon carbide
Pressureless sintered silicon carbide (SSiC) is a particularly light and at the same time hard high-performance ceramic. SSiC is characterized by high strength, which remains almost constant even at extreme temperatures.
Recrystal silicon carbide
Recrystallized silicon carbide(RSiC) are next generation materials formed by mixing high-purity silicon carbide coarse powder and high-activity silicon carbide fine powder, and after grouting, vacuum sintering at 2450 ° C to recrystallize.
Semicorex SiC ceramic boats provide the optimal combination of purity, strength, thermal resistance, and dimensional accuracy required for the rigorous demands of modern semiconductor wafer processing. *
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