English
Home > Products > Silicon Carbide Etching Tray

China Silicon Carbide Etching Tray Manufacturers, Suppliers, Factory

We rely upon strategic thinking, constant modernisation in all segments, technological advances and of course upon our employees that directly participate within our success for Silicon Carbide Etching Tray,Etch Carrier(ICP/PSS),Silicon Carbide Etching Substrate Holder,Silicon Carbide Processing Trays,Sio2 Dry Etching, For additional information and facts, please speak to us as quickly as possible!
Silicon Carbide Etching Tray, Based on our guiding principle of quality is the key to development, we continually strive to exceed our customers' expectations. As such, we sincerely invite all interested companies to contact us for future cooperation, We welcome old and new customers to hold hands together for exploring and developing; For more information, please feel free to contact us. Thanks. Advanced equipment, strict quality control, customer-orientation service, initiative summary and improvement of defects and extensive industry experience enable us to guarantee more customer satisfaction and reputation which, in return, brings us more orders and benefits. If you are interested in any of our products, please feel free to contact us. Inquiry or visit to our company are warmly welcome. We sincerely hope to start a win-win and friendly partnership with you. You can see more details in our website.

Related Products

Hot Products

  • Graphite Single Silicon Pulling Tools

    Graphite Single Silicon Pulling Tools

    Semicorex Graphite Single Silicon Pulling Tools emerge as unsung heroes in the fiery crucible of crystal growth furnaces, where temperatures soar and precision reigns supreme. Their remarkable properties, honed through innovative manufacturing, make them essential for coaxing flawless single crystal silicon into existence.**
  • C/C Composite Crucible

    C/C Composite Crucible

    Semicorex C/C Composite Crucible from Semicorex is a high-performance crucible engineered for crystal growth, offering exceptional thermal stability, durability, and chemical resistance. Choosing Semicorex ensures you receive a reliable, precision-manufactured product tailored to meet the rigorous demands of high-temperature crystal growth applications.*
  • SiC Wafer Grinding Disk

    SiC Wafer Grinding Disk

    Unlock unparalleled precision in semiconductor wafer surface finishing with our state-of-the-art SiC Wafer Grinding Disk. This essential component is meticulously designed for use in semiconductor equipment, specifically crafted to achieve optimal results in wafer grinding applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Porous SiC Plate

    Porous SiC Plate

    Semicorex Porous SiC Plate is an advanced ceramic material designed for high-precision applications, offering superior mechanical strength, thermal stability, and chemical resistance. *
  • High-Temperature SiC Coating for Plasma Etch Chambers

    High-Temperature SiC Coating for Plasma Etch Chambers

    When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
  • SiC Coated ICP Etching Carrier

    SiC Coated ICP Etching Carrier

    Semicorex SiC Coated ICP Etching Carrier engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Korean memory chips plummeted

  • Carbon/carbon composite molding process

    Carbon/carbon composite materials refer to composite materials composed of carbon fiber reinforcement and carbon-based matrix. They have the characteristics of low density, high strength, high specific modulus, low thermal expansion coefficient, etc. Their super high temperature resistance makes them the most promising high-temperature material.

Related Search

Silicon Carbide Etching Tray Holder

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept