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  • 6 Inch Semi-Insulating HPSI SiC Wafer

    6 Inch Semi-Insulating HPSI SiC Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our double-polished 6 Inch Semi-Insulating HPSI SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated Barrel Susceptor for Wafer Epitaxial

    SiC Coated Barrel Susceptor for Wafer Epitaxial

    The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
  • Quartz Ring

    Quartz Ring

    Semicorex Quartz Ring stands as an indispensable component within the intricate realm of semiconductor manufacturing. Crafted with precision and engineered to exacting standards, this ring embodies durability, purity, and functionality, pivotal for the success of semiconductor fabrication processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Porous Graphite with TaC Coating

    Porous Graphite with TaC Coating

    Semicorex Porous Graphite with TaC Coating is a specialized material designed to address critical challenges in the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Wafer Tray

    SiC Wafer Tray

    The Semicorex SiC Wafer Tray is a vital asset in the Metal-Organic Chemical Vapor Deposition (MOCVD) process, meticulously designed to support and heat semiconductor wafers during the essential step of epitaxial layer deposition. This tray is integral to semiconductor device manufacturing, where the precision of layer growth is of utmost importance. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Tray that fuse quality with cost-efficiency.
  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
  • Related Blog
  • Reviews

  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • What is CMP Process

    In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

  • How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?

    Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

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