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China Silicon Carbide Processing Tray Manufacturers, Suppliers, Factory

Our firm has been concentrating on brand strategy. Customers' pleasure is our best advertising. We also supply OEM company for Silicon Carbide Processing Tray,Etch Carrier(ICP/PSS),Silicon Etching Carrier,Silicon Carbide Etching Plate Holder,SiC Etching Substrate Holder, Our company is working through the procedure principle of "integrity-based, cooperation created, people oriented, win-win cooperation". We hope we can have a pleasant relationship with businessman from all around the earth.
Silicon Carbide Processing Tray, Our company mission is that providing high quality and beautiful solutions with reasonable price and strive to gain 100% good reputation from our clients. We believe Profession achieves excellence! We welcome you to cooperate with us and grow up together.

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  • High-Temperature SiC Coating for Plasma Etch Chambers

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    When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
  • SiC Coated Graphite Trays

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    SiC MOSFETs are transistors that offer high power density, improved efficiency, and low failure rates at high temperatures. These advantages of SiC MOSFETs bring numerous benefits to electric vehicles (EVs), including longer driving range, faster charging, and potentially lower cost battery electric vehicles (BEVs). Over the past five years, SiC MOSFETs have been widely used in the power electronics of EVs in vehicles from OEMs such as Tesla and Hyundai. In fact, SiC inverters accounted for 28% of the BEV market in 2023.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

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    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

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    In the landscape of wide bandgap semiconductor materials, silicon carbide (SiC) has emerged as a highly regarded material, particularly excelling in the high-power conversion domain.

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