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Silicon Carbide Ceramic Plate, We adopt advanced production equipment and technology, and perfect testing equipment and methods to ensure our product quality. With our high-level talents, scientific management, excellent teams, and attentive service, our products are favored by domestic and foreign customers. With your support, we will build a better tomorrow!

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  • ICP Plasma Etching System for PSS Process

    ICP Plasma Etching System for PSS Process

    Choose Semicorex's ICP Plasma Etching System for PSS Process for high-quality epitaxy and MOCVD processes. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Spare Parts in Epitaxial Growth

    Spare Parts in Epitaxial Growth

    Semicorex Spare Parts in Epitaxial Growth are crucial components utilized within epitaxial growth systems, particularly in processes involving quartz tube setups. These parts play a vital role in facilitating gas flow to drive tray base rotation and ensure precise temperature control throughout the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Susceptor

    TaC Coating Susceptor

    Semicorex TaC Coating Susceptor represents a pinnacle in material engineering, meticulously crafted from high-quality graphite and fortified with a tantalum carbide coating. Primarily engineered for employment within SiC crystal growth and SiC epitaxial processes, this innovative component stands as a beacon of durability and performance in extreme thermal and chemical environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Support Ring

    SiC Coated Support Ring

    Semicorex SiC Coated Support Ring is an essential component used in the semiconductor epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Epitaxy Susceptor

    MOCVD Epitaxy Susceptor

    Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
  • Planetary Susceptor

    Planetary Susceptor

    Semicorex Planetary Susceptor is a high-purity graphite component with a SiC coating, designed for Aixtron G5+ reactors to ensure uniform heat distribution, chemical resistance, and high-precision epitaxial layer growth.*
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  • Reviews

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • LPE Apparatus

    In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

  • What is C/C composite?

    C/C composite is a carbon-carbon composite material made of carbon fibers as reinforcement and carbon as matrix through processing and carbonization, with excellent mechanical and high-temperature resistance properties. The material was initially used in aerospace and special fields, and with the maturity of the technology, it has been gradually used in photovoltaic, automotive, lithium battery, medical devices and other fields.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

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