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  • Tantalum Carbide Coated Graphite Parts

    Tantalum Carbide Coated Graphite Parts

    Semicorex provide high-quality Tantalum Carbide Coated Graphite Parts with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Boat Carrier

    Wafer Boat Carrier

    Semicorex Wafer Boat Carrier stands as a pinnacle of innovation in the realm of semiconductor processing. Crafted meticulously from graphite and fortified with a cutting-edge coating of Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), this carrier exemplifies precision engineering and advanced materials science. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Semiconductor Quartz Ring

    Semiconductor Quartz Ring

    Semicorex Semiconductor Quartz Ring stands as an indispensable component within the intricate realm of semiconductor processing. Crafted with precision and engineered for reliability, this ring serves as a crucial interface between various stages of semiconductor fabrication, ensuring optimal performance and efficiency throughout the process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ion Implantation Parts

    Ion Implantation Parts

    The Semicorex Ion Implantation Parts made of high-purity graphite components are engineered to meet the rigorous demands of semiconductor manufacturing, specifically for use in ion implantation equipment. These components boast several critical advantages that make them ideal for high-performance applications. We at Semicorex are dedicated to manufacturing and supplying high-performance Ion Implantation Parts that fuse quality with cost-efficiency.
  • SiC Vertical Boats

    SiC Vertical Boats

    Semicorex SiC Vertical Boats are high-performance wafer carrier engineered for use in vertical furnace processes, offering exceptional stability, cleanliness, and durability. Choose Semicorex for uncompromising quality, precision manufacturing, and proven reliability in semiconductor thermal processing.*
  • Impervious graphite

    Impervious graphite

    Semicorex Impervious Graphite is a high-density, resin-impregnated graphite material engineered for exceptional strength, corrosion resistance, and thermal performance in demanding industrial environments. Semicorex delivers advanced impregnation technology, precise material control, and proven expertise in delivering durable, high-purity graphite components that ensure long-term reliability under extreme conditions.*
  • Related Blog
  • Reviews

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • What is the process of isostatic graphite manufacturing?

    The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

  • What is a SiC Boat, and What are its Various Manufacturing Processes?

    A SiC boat, short for silicon carbide boat, is a high-temperature-resistant accessory used in furnace tubes to carry wafers during high-temperature processing. Due to the outstanding properties of silicon carbide such as resistance to high temperatures, chemical corrosion, and excellent thermal stability, SiC boats are extensively utilized in various thermal treatment processes including diffusion, oxidation, Chemical Vapor Deposition (CVD), and annealing.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • GaN and SiC: Coexistence or Substitution?

    The push for higher power density and efficiency has become a primary driver of innovation across multiple industries, including data centers, renewable energy, consumer electronics, electric vehicles, and autonomous driving technologies. In the realm of wide bandgap (WBG) materials, Gallium Nitride (GaN) and Silicon Carbide (SiC) are currently the two core platforms, viewed as pivotal tools leading power semiconductor innovation. These materials are profoundly transforming the power electronics industry to address the ever-increasing demand for power.

  • The structure of Electrostatic Chuck(ESC)

    An Electrostatic Chuck (ESC) is a device used to hold semiconductor wafers in place during processes such as etching, deposition, or polishing.

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