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  • Barrel Susceptor with SiC Coating in Semiconductor

    Barrel Susceptor with SiC Coating in Semiconductor

    If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.
  • Inductively Heated Barrel Epi System

    Inductively Heated Barrel Epi System

    If you need a graphite susceptor with exceptional thermal conductivity and heat distribution properties, look no further than the Semicorex Inductively Heated Barrel Epi System. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments, making it the ideal choice for use in semiconductor manufacturing applications.
  • Deep-UV LED Epitaxial Susceptor

    Deep-UV LED Epitaxial Susceptor

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We have been manufacturer and supplier of Deep-UV LED Epitaxial Susceptor for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • CVD SiC Coated Graphite Susceptor

    CVD SiC Coated Graphite Susceptor

    Semicorex CVD SiC Coated Graphite Susceptor, is a specialized tool used in the handling and processing of semiconductor wafers. The susceptor plays a crucial role in facilitating the growth of thin films, epitaxial layers, and other coatings on substrates with precise control over temperature and material properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Susceptors

    MOCVD Susceptors

    Semicorex’s MOCVD Susceptors epitomize the pinnacle of craftsmanship, endurance, and reliability for intricate graphite epitaxy and precise wafer handling tasks. These susceptors are renowned for their high density, exceptional flatness, and superior thermal control, making them the premier choice for demanding manufacturing environments. We at Semicorex are dedicated to manufacturing and supplying high-performance MOCVD Susceptors that fuse quality with cost-efficiency.
  • Alumina Ceramic Arm

    Alumina Ceramic Arm

    Semicorex Alumina Ceramic Arm is a high-purity robotic component designed for precise and contamination-free wafer handling in semiconductor manufacturing. Choosing Semicorex ensures not only advanced alumina ceramic material quality but also precision craftsmanship that guarantees durability, cleanliness, and reliability in critical process environments.*
  • Related Blog
  • Reviews

  • What is SiC coated graphite susceptor?

    In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

  • How to do CMP Process

    In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

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