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    Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
  • Graphite Foil Roll

    Graphite Foil Roll

    Semicorex Graphite Foil Roll is an advanced material made from expanded natural graphite, designed to meet the precise demands of high-temperature applications. With resilience, chemical inertness, and superior thermal properties, this product stands out as an essential component in various industries including semiconductor, solar, and ceramics.**
  • Crucible for Monocrystalline Silicon

    Crucible for Monocrystalline Silicon

    Semicorex is committed to manufacturing and supplying Crucible for Monocrystalline Silicon that features exceptional purity, superior thermal properties, mechanical strength, and compatibility with established growth methods, making it indispensable for meeting the stringent demands of the electronics and solar industries.**
  • High-Purity Graphite Isostatic Graphite

    High-Purity Graphite Isostatic Graphite

    Semicorex provide high-purity graphite isostatic graphite with customized service, best choice in the semiconductor processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coated Chuck

    TaC Coated Chuck

    Semicorex TaC coated chuck represents a significant advancement in the field of semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • TaC Coating Chuck

    TaC Coating Chuck

    Semicorex TaC Coating Chuck, the cutting-edge vacuum chuck equipped with TaC coatings, specifically designed for semiconductor furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • How is Silicon Carbide Manufactured?

  • Silicon Nitride Ceramic Substrate

    Silicon Nitride Ceramic Substrate is a high-performance ceramic substrate made of silicon nitride (Si₃N₄) as the core material. Its main components are silicon (Si) and nitrogen (N) elements, which are chemically bonded to form Si₃N₄.

  • TaC coated crucible in SiC crystal growth

    TaC coated crucibles have become an important technical solution as reaction vessels in the growth process of silicon carbide (SiC) crystals.

  • SiGe and Si Selective Etching Technology

    A critical step in the fabrication of n-type GAAFETs involves the high-selectivity etching of SiGe:Si stacks prior to the deposition of inner spacers, generating silicon nanosheets and releasing channels.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

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