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China Silicon Carbide Plates Manufacturers, Suppliers, Factory

Sticking to the perception of "Creating products of top of the range and earning mates with people today from all over the world", we constantly put the desire of consumers in the first place for Silicon Carbide Plates,Etch Carrier(ICP/PSS),Silicon Carbide Etching Substrate Holder,Silicon Carbide Processing Trays,Sio2 Dry Etching, We sincerely welcome mates to negotiate organization and start cooperation. We hope to affix hands with good friends in different industries to produce a fantastic long term.
Silicon Carbide Plates, Our company adheres to the spirit of "lower costs, higher quality, and making more benefits for our clients". Employing talents from the same line and adhering to the principle of "honesty, good faith, real thing and sincerity", our company hopes to gain common development with clients from both at home and abroad!

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  • SiC-Coated Barrel Susceptor

    SiC-Coated Barrel Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
  • SiC Coated PSS Etching Carrier

    SiC Coated PSS Etching Carrier

    Wafer carriers used in epixial growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex SiC Coated PSS Etching Carrier engineered specifically for these demanding epitaxy equipment applications. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated RTP Carrier Plate for Epitaxial Growth

    SiC Coated RTP Carrier Plate for Epitaxial Growth

    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • SiC Epi-Wafer Susceptor

    SiC Epi-Wafer Susceptor

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Epi-Wafer Susceptor has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • SiC Coating Ring

    SiC Coating Ring

    Semicorex SiC Coating Ring is a critical component in the demanding environment of semiconductor epitaxy processes. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
  • SiC Epitaxial Module

    SiC Epitaxial Module

    SiC Epitaxial Module from Semicorex combines durability, purity, and precision engineering, which is a critical component in SiC epitaxial growth. Choose Semicorex for unmatched quality in coated graphite solutions and long-term performance in demanding environments.*
  • Related Blog
  • Reviews

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • Advantages of SiC in EV industry

    As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

  • High-Purity Quartz: An Indispensable Material for the Semiconductor Industry

    High-purity quartz possesses remarkable physical and chemical properties. Its inherent crystal structure, shape, and lattice variations contribute to exceptional characteristics such as high-temperature resistance, corrosion resistance, abrasion resistance, low thermal expansion coefficient, high insulation, piezoelectric effects, resonant effects, and unique optical properties. These attributes make it an irreplaceable foundational material for the development of strategic and pillar industries.

  • What is Low Temperature Plasma Etching?

    Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

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