English
Home > Products > Silicon Carbide-Coated Graphite

China Silicon Carbide-Coated Graphite Manufacturers, Suppliers, Factory

"Sincerity, Innovation, Rigorousness, and Efficiency" is the persistent conception of our company for the long-term to develop together with customers for mutual reciprocity and mutual benefit for Silicon Carbide-Coated Graphite,Silicon Carbide Wafer,Silicon Substrate,CVD SiC,Hydride Vapor Phase Epitaxy, In case you are intrigued in any of our products or want to focus on a personalized get, please sense totally free to contact us. We're wanting ahead to forming successful enterprise relationships with new shoppers across the world during the in close proximity to long term.
Silicon Carbide-Coated Graphite, We've got constantly insisted on the evolution of solutions, spent good funds and human resource in technological upgrading, and facilitate production improvement, meeting the wants of prospects from all countries and regions.

Related Products

Hot Products

  • PBN/PG Heaters

    PBN/PG Heaters

    Semicorex PBN/PG Heaters (Pyrolytic Boron Nitride/Pyrolytic Graphite) are engineered from advanced Boron Nitride ceramic materials, meticulously crafted to withstand extreme temperatures exceeding 1700°C. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Graphite Felt

    Graphite Felt

    Semicorex Graphite Felt is a flexible, lightweight, and highly efficient thermal insulation material, ideal for high-temperature applications. Semicorex offers superior-quality graphite felts that deliver exceptional durability and reliability, making them the optimal choice for industries demanding advanced insulation solutions.*
  • C/C-SiC Brake Discs

    C/C-SiC Brake Discs

    Semicorex C/C-SiC brake discs provide the perfect balance of strength, durability, and heat resistance, making them the ultimate choice for high-performance braking systems. Semicorex continues to lead the industry with its cutting-edge materials and engineering expertise, delivering superior solutions that redefine braking technology.*
  • Ga2O3 Substrate

    Ga2O3 Substrate

    Unlock the potential of cutting-edge semiconductor applications with our Ga2O3 Substrate, a revolutionary material at the forefront of semiconductor innovation. Ga2O3, a fourth-generation wide-bandgap semiconductor, exhibits unparalleled characteristics that redefine power device performance and reliability.
  • SiC Steering Mirror

    SiC Steering Mirror

    Semicorex SiC Steering Mirror is a remarkable material that combines durability, resilience, and exceptional optical performance, making it indispensable in advanced optical systems across various high-tech industries.
  • 4 Inch N-type SiC Substrate

    4 Inch N-type SiC Substrate

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our 4 Inch N-type SiC Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Dry Etching vs Wet Etching

    In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

  • Released 850V High Power GaN HEMT Epitaxial Products

    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

  • What Challenges Are Involved in SiC Manufacturing?

    In the landscape of wide bandgap semiconductor materials, silicon carbide (SiC) has emerged as a highly regarded material, particularly excelling in the high-power conversion domain.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

Related Search

Silicon Carbide-Coated Graphite Barrel

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept