China SOI Wafer Manufacturers, Suppliers, Factory

Semicorex can provide customers with a wide range of specifications and high-quality SOI wafers (Silicon On Insulator - Silicon on Insulator) for a wide range of customer applications including MEMS, power devices, pressure sensors, and CMOS integrated circuit manufacturing. SOI wafers offer a good solution for high-speed and low power devices and are widely considered as a new solution for high-voltage and RF devices. SOI wafers are a sandwich-like (Sandwich) structure with three layers; including the top layer (device layer), the middle buried oxygen layer (for insulating SiO2 layer), and the bottom substrate (bulk silicon). SOI wafers are produced using the SIMOX method and wafer bonding technology, which allows for thinner and more precise device layers, uniform thickness uniformity, and low defect density, among other goals.

Semicorex offers SOI wafers with diameters of 6”, 8”, and 12” a wide selection of resistivity ranges from 0.001 to 100,000 ohm-cm, and a wide range of device layer thicknesses from 100nm (1000Å) to 300um to meet the unique SOI requirements of many customers.

Based on the diverse and strong demand from our customers, we can provide customized SOI wafers for.