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    Silicon Carbide Coated Barrel Susceptor

    Semicorex Silicon Carbide Coated Barrel Susceptor is a high-quality graphite product coated with high-purity SiC, offering exceptional heat and corrosion resistance. It is specifically designed for LPE applications in the semiconductor manufacturing industry.
  • SiC Coated Epitaxial Reactor Barrel

    SiC Coated Epitaxial Reactor Barrel

    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • SiC Coated Graphite Barrel Susceptor

    SiC Coated Graphite Barrel Susceptor

    If you're looking for a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex SiC Coated Graphite Barrel Susceptor is the ideal choice. Its exceptional thermal conductivity and heat distribution properties make it the go-to choice for reliable and consistent performance in high-temperature and corrosive environments.
  • RTP Carrier for MOCVD Epitaxial Growth

    RTP Carrier for MOCVD Epitaxial Growth

    Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • MOCVD 3x2’’ Susceptor

    MOCVD 3x2’’ Susceptor

    Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
  • SiC Coated Wafer Carriers

    SiC Coated Wafer Carriers

    Semicorex SiC Coated Wafer Carriers are high-purity graphite susceptors coated with CVD silicon carbide, designed for optimal wafer support during high-temperature semiconductor processes. Choose Semicorex for unmatched coating quality, precision manufacturing, and proven reliability trusted by leading semiconductor fabs worldwide.*
  • Related Blog
  • Reviews

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Application of SiC and GaN in electric vehicles

    SiC MOSFETs are transistors that offer high power density, improved efficiency, and low failure rates at high temperatures. These advantages of SiC MOSFETs bring numerous benefits to electric vehicles (EVs), including longer driving range, faster charging, and potentially lower cost battery electric vehicles (BEVs). Over the past five years, SiC MOSFETs have been widely used in the power electronics of EVs in vehicles from OEMs such as Tesla and Hyundai. In fact, SiC inverters accounted for 28% of the BEV market in 2023.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • SiC Ceramics: The Indispensable Material for High-Precision Components in Semiconductor Manufacturing

    Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

  • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

    Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

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