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  • PSS Etching Carrier Plate for Semiconductor

    PSS Etching Carrier Plate for Semiconductor

    Semicorex PSS Etching Carrier Plate for Semiconductor is specially engineered for high-temperature and harsh chemical cleaning environments required for epitaxial growth and wafer handling processes. Our ultra-pure PSS Etching Carrier Plate for Semiconductor is designed to support wafers during thin-film deposition phases like MOCVD and epitaxy susceptors, pancake or satellite platforms. Our SiC coated carrier has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. We provide cost-effective solutions to our customers, and our products cover many European and American markets. Semicorex looks forward to being your long-term partner in China.
  • High-Temperature SiC Coating for Plasma Etch Chambers

    High-Temperature SiC Coating for Plasma Etch Chambers

    When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
  • Silicon Carbide Epitaxy Susceptor

    Silicon Carbide Epitaxy Susceptor

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Tantalum Carbide Coated Ring

    Tantalum Carbide Coated Ring

    Semicorex Tantalum Carbide Coated Ring is a crucial component used in semiconductor processing. It is designed with a specialized coating that serves multiple functions to enhance the efficiency and longevity of graphite components within semiconductor machinery. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • ALD Planetary Susceptor

    ALD Planetary Susceptor

    Semicorex ALD Planetary Susceptor is important in ALD equipment due to their ability to withstand harsh processing conditions, ensuring high-quality film deposition for a variety of applications. As the demand for advanced semiconductor devices with smaller dimensions and enhanced performance continues to grow, the use of the ALD Planetary Susceptor in ALD is expected to expand further.**
  • SiC MOCVD Cover Segment

    SiC MOCVD Cover Segment

    Semicorex' s commitment to quality and innovation is evident in the SiC MOCVD Cover Segment. By enabling reliable, efficient, and high-quality SiC epitaxy, it plays a vital role in advancing the capabilities of next-generation semiconductor devices.**
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  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Advantages of SiC in EV industry

    As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

  • The Crucial Role of Epitaxial Layers in Semiconductor Devices

    Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • Monocrystalline silicon vs. polycrystalline silicon

    Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

  • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

    Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

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