English
Home > Products > silicon carbide price

China silicon carbide price Manufacturers, Suppliers, Factory

Assume full accountability to meet all requires of our purchasers; realize continual advancements by selling the advancement of our customers; grow to be the final permanent cooperative partner of consumers and maximize the interests of clientele for silicon carbide price,sic bead,sic grinding,sic ball,sic ceramic, Never-ending improvement and striving for 0% deficiency are our two main quality policies. Should you need anything, don't hesitate to contact us.
silicon carbide price, We are going to supply much better items with diversified designs and professional services. We sincerely welcome friends from over the world to visit our company and cooperate with us on the basis of long-term and mutual benefits.

Related Products

Hot Products

  • SiC Epitaxy Susceptor

    SiC Epitaxy Susceptor

    Crafted with precision and engineered for reliability, SiC Epitaxy Susceptor features high corrosion resistance, high thermal conductivity, resistance to thermal shock, and high chemical stability, enabling it to function effectively within an epitaxial atmosphere.Therefore, SiC Epitaxy Susceptor is considered a core and crucial component in MOCVD equipment. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Rigid Graphite Felt

    Rigid Graphite Felt

    Semicorex Rigid Graphite Felt is a high-performance thermal insulation material made from PAN-based and viscose-based carbon fiber, widely used in high-temperature industrial furnaces. Choose Semicorex for its advanced manufacturing processes and proven expertise in delivering durable and reliable solutions for demanding semiconductor applications.*
  • Silicon Carbide Coating Graphite Susceptor for MOCVD

    Silicon Carbide Coating Graphite Susceptor for MOCVD

    Semicorex is a trusted supplier and manufacturer of silicon carbide coating graphite susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • Alumina Boat

    Alumina Boat

    Alumina Boat by Semicorex finds its niche in the semiconductor industry, general machinery, and high-temperature processes, proving indispensable for professionals seeking reliability and precision.
  • Refined Graphite Mold

    Refined Graphite Mold

    Semicorex Refined Graphite Mold is a versatile and efficient tool in various industrial casting and molding processes. Its high purity, low thermal expansion, and excellent surface finish make it a preferred choice for applications requiring precision and quality.
  • Halfmoon Part for LPE

    Halfmoon Part for LPE

    Semicorex Halfmoon Part for LPE is a TaC-coated graphite component designed for use in LPE reactors, playing a critical role in SiC epitaxy processes. Choose Semicorex for its high-quality, durable components that ensure optimal performance and reliability in demanding semiconductor manufacturing environments.*
  • Related Blog
  • Reviews

  • How Advanced Materials Solve 3 Critical Challenges in Semiconductor Furnace Design

    The race to shrink transistor sizes and scale solar cell efficiency is pushing thermal processing equipment to its limits.

  • High-Purity Quartz: An Indispensable Material for the Semiconductor Industry

    High-purity quartz possesses remarkable physical and chemical properties. Its inherent crystal structure, shape, and lattice variations contribute to exceptional characteristics such as high-temperature resistance, corrosion resistance, abrasion resistance, low thermal expansion coefficient, high insulation, piezoelectric effects, resonant effects, and unique optical properties. These attributes make it an irreplaceable foundational material for the development of strategic and pillar industries.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • What is AlN Heater

    Aluminum Nitride (AlN) ceramic heater for semiconductor is a device used to heat semiconductor materials.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept