English
Home > Products > Silicon Carbide Coated Graphite Trays

China Silicon Carbide Coated Graphite Trays Manufacturers, Suppliers, Factory

We'll dedicate ourselves to offering our esteemed customers together with the most enthusiastically thoughtful solutions for Silicon Carbide Coated Graphite Trays,Silicon Carbide Semiconductor,SiC Silicon Carbide,Silicon Carbide Coating,SIC Epitaxy Process, "Passion, Honesty, Sound service, Keen cooperation and Development" are our objectives. We have been here anticipating good friends all over the environment!
Silicon Carbide Coated Graphite Trays, Based on experienced engineers, all orders for drawing-based or sample-based processing are welcomed. We have won a good reputation for outstanding customer service among our overseas customers. We will continue to try the best to offer you good quality products and the best service. We are looking forward to serving you.

Related Products

Hot Products

  • ICP Etching Wafer Holder

    ICP Etching Wafer Holder

    Semicorex's ICP etching wafer holder is the perfect solution for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Durable Focus Rings for Semiconductor Processing

    Durable Focus Rings for Semiconductor Processing

    Semicorex durable focus rings for semiconductor processing are designed to withstand the extreme environments of plasma etch chambers used in semiconductor processing. Our focus rings are made of high-purity graphite coated with a dense, wear-resistant silicon carbide (SiC) coating. The SiC coating has high corrosion and heat resistance properties, as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process to improve the service life of our focus rings.
  • Si Dummy Wafer

    Si Dummy Wafer

    Semicorex Si Dummy Wafer, crafted from either monocrystalline or polycrystalline silicon, shares the same foundational material as production wafers. Its similar thermal and mechanical properties are ideal for simulating real production conditions without the associated costs.
  • Silicon Carbide Boats

    Silicon Carbide Boats

    Semicorex Silicon Carbide Boats are high-performance wafer carriers designed for semiconductor oxidation and diffusion processes. These precision-engineered components provide a stable, high-purity environment for silicon wafers inside furnace tubes, ensuring optimal process reliability and efficiency. *
  • SiC Epitaxial Module

    SiC Epitaxial Module

    SiC Epitaxial Module from Semicorex combines durability, purity, and precision engineering, which is a critical component in SiC epitaxial growth. Choose Semicorex for unmatched quality in coated graphite solutions and long-term performance in demanding environments.*
  • PBN Composite Heaters

    PBN Composite Heaters

    Semicorex PBN Composite Heaters are advanced heating elements engineered for high-temperature, ultra-clean vacuum environments, widely used in semiconductor, optoelectronics, and material research industries. Choose Semicorex for industry-leading expertise, small-batch customization, and world-class quality in PBN heating solutions.*
  • Related Blog
  • Reviews

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • What are the Pros and Cons of Dry Etching and Wet Etching?

    Etching is an essential process in semiconductor manufacturing. This process can be categorized into two types: dry etching and wet etching. Each technique has its own advantages and limitations, making it crucial to understand the differences between them. So, how do you choose the best etching method? What are the pros and cons of dry etching and wet etching?

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept