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We believe that prolonged expression partnership is usually a result of high quality, benefit added assistance, rich encounter and personal contact for silicon carbide wafer manufacturers,dummy wafer,sic epi wafers,test wafer,wafer testing process, Welcome around the world consumers to speak to us for organization and long-term cooperation. We'll be your reputable partner and supplier of auto areas and accessories in China.
silicon carbide wafer manufacturers, Our company has built stable business relationships with many well-known domestic companies as well as oversea customers. With the goal of providing high quality products to customers at low cots, we've been committed to improving its capacities in research, development, manufacturing and management. We have honored to receive recognition from our customers. Till now we have now passed ISO9001 in 2005 and ISO/TS16949 in 2008. Enterprises of "quality of survival, the credibility of development" for the purpose, sincerely welcome domestic and foreign businessmen to visit to discuss cooperation.

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    Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
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    Semicorex Graphite Ion Implanter stands as a critical component in the realm of semiconductor manufacturing, distinguished by its fine particle composition, excellent conductivity, and resilience to extreme conditions.
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    PSS Handling Carrier for Wafer Transfer

    Semicorex's PSS Handling Carrier for Wafer Transfer is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • ICP Plasma Etching Tray

    ICP Plasma Etching Tray

    Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • SiC Coated Wafer Susceptors

    SiC Coated Wafer Susceptors

    Semicorex SiC Coated Wafer Susceptors are high-performance carrier designed specifically for ultrathin film deposition under pressureless conditions. With advanced materials engineering, precision porosity control, and robust SiC coating technology, Semicorex delivers industry-leading reliability and customization to meet the evolving needs of next-generation semiconductor manufacturing.*
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    12-inch Semi-Insulating SiC Substrates

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    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

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