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We believe that prolonged expression partnership is usually a result of high quality, benefit added assistance, rich encounter and personal contact for silicon carbide wafer manufacturers,dummy wafer,sic epi wafers,test wafer,wafer testing process, Welcome around the world consumers to speak to us for organization and long-term cooperation. We'll be your reputable partner and supplier of auto areas and accessories in China.
silicon carbide wafer manufacturers, Our company has built stable business relationships with many well-known domestic companies as well as oversea customers. With the goal of providing high quality products to customers at low cots, we've been committed to improving its capacities in research, development, manufacturing and management. We have honored to receive recognition from our customers. Till now we have now passed ISO9001 in 2005 and ISO/TS16949 in 2008. Enterprises of "quality of survival, the credibility of development" for the purpose, sincerely welcome domestic and foreign businessmen to visit to discuss cooperation.

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    Silicon Carbide Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • TaC Coated Ring

    TaC Coated Ring

    Semicorex TaC Coated Ring stands as a critical component that meets these demanding requirements. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Alumina Ceramic Robotic Arm

    Alumina Ceramic Robotic Arm

    Semicorex Alumina Ceramic Robotic Arm, also known as wafer handling ceramic robotic arm or ceramic silicon wafer handling fork, is a high-performance semiconductor equipment component. Its design takes into account the stringent requirements of semiconductor manufacturing. With its high temperature resistance, wear resistance, chemical stability, and excellent electrical insulation properties, the alumina ceramic arm plays an irreplaceable role in the global semiconductor manufacturing industry. We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Robotic Arm that fuse quality with cost-efficiency.**
  • Tantalum Carbide Guide Ring

    Tantalum Carbide Guide Ring

    Semicorex Tantalum Carbide Guide Ring is a graphite ring coated with tantalum carbide, used in silicon carbide crystal growth furnaces for seed crystal support, temperature optimization, and enhanced growth stability. Choose Semicorex for its advanced materials and design, which significantly improve the efficiency and quality of crystal growth.*
  • Silicon Carbide Wafer Grinding Wheel

    Silicon Carbide Wafer Grinding Wheel

    Experience the epitome of precision in semiconductor wafer surface refinement with our cutting-edge Silicon Carbide Wafer Grinding Wheel. This disc-shaped component, meticulously designed for semiconductor equipment, redefines the standards of surface grinding, ensuring optimal results for semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Microporous SiC Chuck

    Microporous SiC Chuck

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  • Related Blog
  • Reviews

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

  • Monocrystalline Silicon Manufacturing

    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

    Etching Process: Silicon vs. Silicon Carbide

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

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