English
Home > Products > Silicon Carbide Coated Substrate Holder

China Silicon Carbide Coated Substrate Holder Manufacturers, Suppliers, Factory

We'll make each hard work to become excellent and excellent, and speed up our measures for standing from the rank of intercontinental top-grade and high-tech enterprises for Silicon Carbide Coated Substrate Holder,Etch Carrier(ICP/PSS),Silicon Carbide Etching Carrier,SiC processing Tray,Wafer Etching, We welcome prospects all around the word to call us for foreseeable future small business interactions. Our products and solutions are the very best. Once Selected, Ideal Forever!
Silicon Carbide Coated Substrate Holder, Our company insists on the principle of "Quality First, Sustainable Development", and takes "Honest Business, Mutual Benefits" as our developable goal. All members sincerely thank all old and new customers' support. We'll keep working hard and offering you the highest-quality goods and service.

Related Products

Hot Products

  • Gas Inlet Ring for Semiconductor Equipment

    Gas Inlet Ring for Semiconductor Equipment

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Gas Inlet Ring for Semiconductor Equipment has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coating Susceptor

    TaC Coating Susceptor

    Semicorex TaC Coating Susceptor represents a pinnacle in material engineering, meticulously crafted from high-quality graphite and fortified with a tantalum carbide coating. Primarily engineered for employment within SiC crystal growth and SiC epitaxial processes, this innovative component stands as a beacon of durability and performance in extreme thermal and chemical environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Isostatic Graphite Crucible

    Isostatic Graphite Crucible

    Semicorex Isostatic Graphite Crucible is a specialized vessel used in the thermal processing of semiconductor materials, particularly in the production of monocrystals. It plays a crucial role in the controlled growth of single-crystal structures essential for semiconductor device fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD shower head with SiC Coat

    CVD shower head with SiC Coat

    Semicorex CVD shower head with SiC Coat represents an advanced component engineered for precision in industrial applications, notably within the realms of chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD). Serving as a critical conduit for the delivery of precursor gases or reactive species, this specialized CVD shower head with SiC Coat facilitates the precise deposition of materials onto a substrate’s surface, integral to these sophisticated manufacturing processes.
  • TaC Coated Planetary Susceptor

    TaC Coated Planetary Susceptor

    Semicorex TaC Coated Planetary Susceptor is a highly specialized component designed for use in the epitaxial processes of semiconductor manufacturing. Semicorex is dedicated to delivering top-quality products at competitive prices. We are eager to establish a long-term partnership with you in China.*
  • End Effector for Wafer Handling

    End Effector for Wafer Handling

    Semicorex End Effector for Wafer Handling are dimensionally precise and thermally stable for wafer processing. We have been manufacturer and supplier of silicon carbide coating elements for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Silicon Carbide Applications

    Silicon carbide has a large number of applications in emerging industries and traditional industries. At present, the global semiconductor market has exceeded 100 billion yuan. It is expected that by 2025, the global sales of semiconductor manufacturing materials will reach 39.5 billion US dollars, of which the silicon carbide semiconductor market is expected to reach a market size of 2.5 billion US dollars in 2025. At the same time, silicon carbide is still the material with the best application performance in traditional ceramics, refractory, high temperature, grinding and other fields.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • LPE Apparatus

    In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept