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    Semicorex Silicon Carbide Boat is a high-performance component designed for use in semiconductor diffusion processes, offering exceptional thermal stability, wear resistance, and chemical durability. Choose Semicorex for its advanced manufacturing capabilities, delivering reliable, high-quality products that ensure optimal performance in demanding semiconductor and industrial applications.*
  • 30mm Aluminum Nitride Wafer Substrate

    30mm Aluminum Nitride Wafer Substrate

    The unique attributes of Semicorex 30mm Aluminum Nitride Wafer Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 30mm Aluminum Nitride Wafer Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 30mm Aluminum Nitride Wafer Substrate’s versatility and critical role in technological advancements across diverse sectors.
  • Fused Quartz Tube

    Fused Quartz Tube

    Semicorex premium Fused Quartz Tube, meticulously crafted from semiconductor-grade quartz to meet the exacting standards of modern semiconductor processing. Engineered for precision and reliability, this high-performance quartz tube is an indispensable component in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Ring

    Tantalum Carbide Ring

    Semicorex Tantalum Carbide Ring is a graphite ring coated with tantalum carbide, used as a guide ring in silicon carbide crystal growth furnaces to ensure precise temperature and gas flow control. Choose Semicorex for its advanced coating technology and high-quality materials, delivering durable and reliable components that enhance crystal growth efficiency and product lifespan.*
  • Spare Parts in Epitaxial Growth

    Spare Parts in Epitaxial Growth

    Semicorex Spare Parts in Epitaxial Growth are crucial components utilized within epitaxial growth systems, particularly in processes involving quartz tube setups. These parts play a vital role in facilitating gas flow to drive tray base rotation and ensure precise temperature control throughout the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiN Plates

    SiN Plates

    Semicorex SiN Plates are versatile materials, prized for their mechanical strength, thermal conductivity, and electrical insulation, making them ideal for circuit substrates and heat spreaders. Choosing Semicorex SiN plates ensures high-quality, reliable performance for advanced electronic applications, backed by cutting-edge technology and stringent quality control.*
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  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • SiC Coated Susceptors in MOCVD Processes

    CVD SiC coated susceptors function as specialized wafer holders in Metal-Organic Chemical Vapor Deposition (MOCVD) processes, playing a crucial role in semiconductor fabrication. These components are vital for maintaining the structural integrity of wafers during epitaxy under extreme conditions, such as high temperatures and corrosive environments. **

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

  • Understanding Chemical Vapor Deposition (CVD): A Comprehensive Overview

    Chemical Vapor Deposition (CVD) is a versatile thin-film deposition technique widely employed in the semiconductor industry for fabricating high-quality, conformal thin films on various substrates. This process involves chemical reactions of gaseous precursors onto a heated substrate surface, resulting in the formation of a solid thin film. This article delves into the intricacies of CVD, exploring its mechanisms, advantages, limitations, and key applications in semiconductor manufacturing.

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