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Carbide-Coated Reactor Barrel Susceptor

Carbide-Coated Reactor Barrel Susceptor

The Semicorex Carbide-Coated Reactor Barrel Susceptor is a premium quality graphite product coated with high-purity SiC, designed specifically for LPE processes. With excellent heat and corrosion resistance, this product is perfect for use in semiconductor manufacturing applications.

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Product Description

If you're looking for a high-performance graphite susceptor for epitaxial layer formation on semiconductor wafers, the Semicorex Carbide-Coated Reactor Barrel Susceptor is an excellent choice. Its silicon carbide coating provides superior heat distribution and thermal conductivity, ensuring exceptional performance in even the most demanding high-temperature environments.

At Semicorex, we focus on providing high-quality, cost-effective carbide-coated reactor barrel susceptor, we prioritize customer satisfaction and provide cost-effective solutions. We look forward to becoming your long-term partner, delivering high-quality products and exceptional customer service.


Parameters of Carbide-Coated Reactor Barrel Susceptor

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of Carbide-Coated Reactor Barrel Susceptor

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.




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