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Having a positive and progressive attitude to customer's fascination, our organization constantly improves our solution high-quality to fulfill the requirements of shoppers and further focuses on safety, reliability, environmental prerequisites, and innovation of Silicon Carbide Ceramic Membrane,SiC Ceramic Membrane,SiC Membranes,Silicon Carbide (SiC) Membrane,Silicon Carbide Membranes, Looking to the long run, a lengthy way to go, regularly striving to become the all employees with full enthusiasm, one hundred times the confidence and put our company built a beautiful environment, advanced merchandise, good quality first-class modern company and work hard!
Silicon Carbide Ceramic Membrane, We insist on the principle of "Credit being primary, Customers being the king and Quality being the best", we have been looking forward to the mutual cooperation with all friends at home and abroad and we'll create a bright future of business.

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  • SiC Ceramic Wafer Boat

    SiC Ceramic Wafer Boat

    Semicorex SiC Ceramic Wafer Boat has emerged as a critical enabling technology, providing an unwavering platform for high-temperature processing while safeguarding wafer integrity and ensuring the purity required for high-performance devices. It’s tailored to the semiconductor and photovoltaic industries that are built on precision. Every aspect of wafer processing, from deposition to diffusion, demands meticulous control and pristine environments. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Ceramic Wafer Boat that fuses quality with cost-efficiency.**
  • Microporous SiC Chuck

    Microporous SiC Chuck

    Semicorex Microporous SiC Chuck is a high-precision vacuum chuck designed for secure wafer handling in semiconductor processes. Choose Semicorex for our customizable solutions, superior material selection, and commitment to precision, ensuring optimal performance in your wafer processing needs.*
  • SiC Coated Barrel Susceptor for Wafer Epitaxial

    SiC Coated Barrel Susceptor for Wafer Epitaxial

    The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
  • Batch Wafer Boat

    Batch Wafer Boat

    Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Batch Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Cantilever Paddles

    SiC Cantilever Paddles

    Semicorex SiC Cantilever Paddles are high-performance silicon carbide cantilever paddles used in semiconductor thermal processing equipment, designed for stable wafer handling in high-temperature environments. Choosing Semicorex means choosing high-purity materials, excellent thermal stability and industry-leading precision manufacturing technology to ensure that every critical process of yours is stable and reliable.*
  • Graphite Top Plates

    Graphite Top Plates

    Semicorex Graphite Top Plates are precision-engineered fixtures designed for secure and reliable handling of hot glass bottles in high-temperature manufacturing environments. Choose Semicorex for unmatched material quality, custom machining capabilities, and consistent performance trusted by leading glass producers worldwide.*
  • Related Blog
  • Reviews

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Isostatic Graphite Production Technology

    Isostatic pressing technology is a critical process in the manufacturing of isostatic graphite, largely determining the performance of the final product. As such, comprehensive research and optimization of isostatic graphite production remain essential focal points in the industry.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Substrate and Epitaxy

    In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

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