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The key to our success is "Good Products Good quality, Reasonable Price and Efficient Service" for Coated Silicon Carbide Chamber,Coated Silicon Carbide Susceptor,SiC Coating Susceptor,Silicon Carbide Coated Deposition Susceptor,SiC Coating Semiconductor, In order to expand our international market, we mainly supply our oversea customers Top quality performance products and service.
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    Silicon Epitaxial Deposition In Barrel Reactor

    If you need a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex Silicon Epitaxial Deposition In Barrel Reactor is the ideal choice. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, making it the go-to choice for reliable and consistent performance in even the most challenging environments.
  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
  • SiC ICP Etching Disk

    SiC ICP Etching Disk

    Semicorex SiC ICP Etching Disk is not merely components; it's essential enabler of cutting-edge semiconductor manufacturing as the semiconductor industry continues its relentless pursuit of miniaturization and performance, the demand for advanced materials like SiC will only intensify. It ensures the precision, reliability, and performance required to power our technology-driven world.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC ICP Etching Disk that fuses quality with cost-efficiency.**
  • Epitaxy Wafer Carrier

    Epitaxy Wafer Carrier

    Semicorex Epitaxy Wafer Carrier provides a highly reliable solution for Epitaxy applications.The advanced materials and coating technology ensure that these carriers deliver outstanding performance, reducing operational costs and downtime due to maintenance or replacement.**
  • SiC Epitaxial Module

    SiC Epitaxial Module

    SiC Epitaxial Module from Semicorex combines durability, purity, and precision engineering, which is a critical component in SiC epitaxial growth. Choose Semicorex for unmatched quality in coated graphite solutions and long-term performance in demanding environments.*
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  • About Semiconductor Heating Elements

    Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Monocrystalline silicon vs. polycrystalline silicon

    Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

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