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  • SiC Finger

    SiC Finger

    Semicorex SiC Finger stands as a crucial component within semiconductor processing, work as wafer transfer tool. Shaped akin to a finger, this specialized device is meticulously crafted from silicon carbide (SiC), a material renowned for its exceptional mechanical strength, thermal stability, and resistance to harsh chemical environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Pedestal

    Silicon Pedestal

    Semicorex Silicon Pedestal, a often overlooked yet critically important component, plays a vital role in achieving precise and repeatable results in semiconductor diffusion and oxidation processes. The specialized platform, upon which silicon boats rest within high-temperature furnaces, offers unique advantages that directly contribute to enhanced temperature uniformity, improved wafer quality, and ultimately, superior semiconductor device performance.**
  • SiC Coated Graphite Lid Cover

    SiC Coated Graphite Lid Cover

    Unlock the epitome of performance and durability in the realm of semiconductor equipment with our cutting-edge SiC Coated Graphite Lid Cover. This disc-shaped component is expertly designed for various semiconductor applications, offering a unique combination of graphite and Silicon Carbide (SiC) coating to enhance functionality and efficiency. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 10x10mm Nonpolar M-plane Aluminum Substrate

    10x10mm Nonpolar M-plane Aluminum Substrate

    The unique attributes of Semicorex 10x10mm Nonpolar M-plane Aluminum Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 10x10mm Nonpolar M-plane Aluminum Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 10x10mm Nonpolar M-plane Aluminum Substrate’s versatility and critical role in technological advancements across diverse sectors.
  • Zirconia Ceramic Nozzle

    Zirconia Ceramic Nozzle

    Semicorex Zirconia Ceramic Nozzle, crafted with meticulous attention to detail, this nozzle stands as the epitome of excellence in controlling the flow rate of both gases and liquids with unparalleled uniformity and precision. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Semiconductor Wafer Carrier for MOCVD Equipment

    Semiconductor Wafer Carrier for MOCVD Equipment

    You can rest assured to buy Semiconductor Wafer Carrier for MOCVD Equipment from our factory. Semiconductor wafer carriers are an essential component of MOCVD equipment. They are used to transport and protect semiconductor wafers during the manufacturing process. Semiconductor Wafer Carriers for MOCVD Equipment are made of high-purity materials and are designed to maintain the integrity of the wafers during processing.
  • Related Blog
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  • What Challenges Are Involved in SiC Manufacturing?

    In the landscape of wide bandgap semiconductor materials, silicon carbide (SiC) has emerged as a highly regarded material, particularly excelling in the high-power conversion domain.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

  • SiGe in Chip Manufacturing: A Professional News Report

    To meet the demands for high performance and low power consumption in the realm of modern semiconductor technology, SiGe (Silicon Germanium) has emerged as a composite material of choice in semiconductor chip manufacturing due to its unique physical and electrical properties.

  • Ion Implant and Diffusion Process

    Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • Electronic Grade Silicon Carbide Powder

    As the core material of the third-generation semiconductors, silicon carbide (SiC) is playing an increasingly important role in high-tech fields such as new energy vehicles, photovoltaic energy storage, and 5G communications due to its excellent physical properties.

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