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    The advanced material properties of Semicorex SiC Diffusion Furnace Tube, including high flexural strength, outstanding oxidation and corrosion resistance, high wear resistance, low friction coefficient, superior high-temperature mechanical properties, and ultra-high purity, make it indispensable in the semiconductor industry, particularly for diffusion furnace applications. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Diffusion Furnace Tube that fuse quality with cost-efficiency.**
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  • Related Blog
  • Reviews

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • The Crucial Role of Epitaxial Layers in Semiconductor Devices

    Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

  • Monocrystalline silicon vs. polycrystalline silicon

    Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

  • Introducing Silicon Material

    Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

  • How Does TaC Coating Protect Graphite Components In Semiconductors

    That's where the game-changing innovation of TaC Coating enters the picture, and why our advanced solutions at Semicorex are engineered to directly address your most persistent production pain points. Graphite is fantastic for its thermal properties, but without a robust shield, it simply cannot withstand the aggressive conditions inside many process chambers.

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