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ICP Plasma Etching System
Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
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Product Description
Achieve the highest quality epitaxy and MOCVD processes with Semicorex's SiC Coated carrier for ICP Plasma Etching System. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. Our fine SiC crystal coating provides a clean and smooth surface, allowing for optimal handling of wafers.
Contact us today to learn more about our SiC Coated carrier for ICP Plasma Etching System.
Parameters of SiC Coated carrier for ICP Plasma Etching System
|
Main Specifications of CVD-SIC Coating |
||
|
SiC-CVD Properties |
||
|
Crystal Structure |
FCC β phase |
|
|
Density |
g/cm ³ |
3.21 |
|
Hardness |
Vickers hardness |
2500 |
|
Grain Size |
μm |
2~10 |
|
Chemical Purity |
% |
99.99995 |
|
Heat Capacity |
J·kg-1 ·K-1 |
640 |
|
Sublimation Temperature |
℃ |
2700 |
|
Felexural Strength |
MPa (RT 4-point) |
415 |
|
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
|
Thermal Expansion (C.T.E) |
10-6K-1 |
4.5 |
|
Thermal conductivity |
(W/mK) |
300 |
Features of SiC Coated carrier for ICP Plasma Etching System
- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion
Hot Tags: ICP Plasma Etching System, China, Manufacturers, Suppliers, Factory, Customized, Bulk, Advanced, Durable
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