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CVD, Our advantages are our innovation, flexibility and reliability which have been built during last 20 years. We focus on providing service for our clients as a key element in strengthening our long-term relationships. The continual availability of high grade products and solutions in combination with our excellent pre- and after-sales service ensures strong competitiveness in an increasingly globalized market.

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  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.
  • MOCVD Inlet Rings

    MOCVD Inlet Rings

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. Our MOCVD Inlet Rings have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • P-type SiC Substrate Wafer

    P-type SiC Substrate Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our P-type SiC Substrate Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Quartz Wafer Carrier

    Quartz Wafer Carrier

    Semicorex Quartz Wafer Carrier, designed to exceed industry standards and optimize your production processes. This meticulously crafted carrier is engineered with precision and reliability to meet the exacting demands of the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Graphite Heating Elements

    Graphite Heating Elements

    Semicorex Graphite Heating Elements have become essential components in semiconductor manufacturing, enabling the precise and controlled thermal environments required for advanced wafer processing. Their unique combination of material properties, design flexibility, and performance advantages makes them ideal for meeting the stringent demands of next-generation semiconductor device fabrication. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heating Elements that fuse quality with cost-efficiency.**
  • AlN Single Crystal Wafer

    AlN Single Crystal Wafer

    Semicorex AlN single crystal wafer is a cutting-edge semiconductor substrate designed for high-power, high-frequency, and deep ultraviolet (UV) applications. Choosing Semicorex ensures access to industry-leading crystal growth technology, high-purity materials, and precise wafer fabrication, guaranteeing superior performance and reliability for demanding applications.*
  • Related Blog
  • Reviews

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • What is a TaC coating on graphite?

    In the rapidly evolving field of semiconductor manufacturing, even the smallest improvements can make a big difference when it comes to achieving optimal performance, durability, and efficiency. One advancement that is generating a lot of buzz in the industry is the use of TaC (Tantalum Carbide) coating on graphite surfaces. But what exactly is TaC coating, and why are semiconductor manufacturers taking notice of it?

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Monocrystalline Silicon Manufacturing

    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

  • The structure of Electrostatic Chuck(ESC)

    An Electrostatic Chuck (ESC) is a device used to hold semiconductor wafers in place during processes such as etching, deposition, or polishing.

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