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China CVD SiC Wafer Carrier Manufacturers, Suppliers, Factory

We take "customer-friendly, quality-oriented, integrative, innovative" as objectives. "Truth and honesty" is our administration ideal for CVD SiC Wafer Carrier,Etch Carrier(ICP/PSS),Substrate Etching Carrier,Silicon Carbide Fixture Plate,Silicon Carbide Coated Graphite Susceptor, We believe we'll become a leader in building and producing top quality merchandise in the two Chinese and international markets. We hope to cooperate with much more close friends for mutual gains.
CVD SiC Wafer Carrier, It is our customers' satisfaction over our products and services that always inspires us to do better in this business. We build mutually beneficial relationship with our clients by giving them large selection of premium car parts at marked down prices. We offer wholesale prices on all our quality parts so you are guaranteed greater savings.

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  • About Semiconductor Heating Elements

    Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Applications of Silicon Carbide

    Among the core components of electric vehicles, automotive power modules—primarily utilizing IGBT technology—play a crucial role. These modules not only determine the key performance of the electric drive system but also account for over 40% of the cost of the motor inverter.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • Synthesis method of high-purity Silicon Carbide (SiC) powder

    At present, the synthesis methods of high-purity SiC powder for growing single crystals mainly include: CVD method and improved self-propagating synthesis method (also known as high-temperature synthesis method or combustion method).

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