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Our products are greatly recognized and trustworthy by users and will fulfill continually shifting economic and social requires for CVD SiC coating Plate,Etch Carrier(ICP/PSS),Carbide-Coated Plasma Sputtering Target Holder,Silicon Carbide PECVD Tray,Etching Carrier holder, We adhere on the tenet of "Services of Standardization, to meet Customers' Demands".
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    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

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    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

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    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

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