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  • Porous Graphite Rod

    Porous Graphite Rod

    Semicorex Porous Graphite Rod is a high-purity material featuring a highly open interconnected pore structure and high porosity, specifically designed to enhance the SiC crystal growth process. Choose Semicorex for cutting-edge semiconductor material solutions that prioritize precision, reliability, and innovation.*
  • SiC Epitaxy

    SiC Epitaxy

    Semicorex provides custom thin film (silicon carbide) SiC epitaxy on substrates for the development of silicon carbide devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Si3N4 Sleeve

    Si3N4 Sleeve

    Si3N4 Sleeve by Semicorex is a versatile and high-performance material that offers a unique combination of low density, superior hardness, excellent wear resistance, and exceptional thermal and chemical stability.**
  • Quartz Crucible in Semiconductor

    Quartz Crucible in Semiconductor

    Semicorex cutting-edge Quartz Crucible in Semiconductor, the epitome of precision and reliability for semiconductor processing. Crafted from semiconductor-grade quartz, this crucible is engineered to meet the demanding requirements of the semiconductor industry, ensuring optimal performance and efficiency in every application. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Annealing Boat

    Silicon Annealing Boat

    Semicorex Silicon Annealing Boat, meticulously designed for handling and processing silicon wafers, play a crucial role in achieving high-performance semiconductor devices. Its unique design features and material properties make it essential for critical fabrication steps like diffusion and oxidation, ensuring uniform processing, maximizing yield, and contributing to the overall quality and reliability of semiconductor devices.**
  • SiC Wafer Chuck

    SiC Wafer Chuck

    Semicorex SiC Wafer Chuck stands as a pinnacle of innovation in semiconductor manufacturing, serving as a crucial component in the intricate process of semiconductor fabrication. Crafted with meticulous precision and cutting-edge technology, this chuck plays an indispensable role in supporting and stabilizing silicon carbide (SiC) wafers during various stages of production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • Reviews

  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • Nearly $840 Million: Onsemi Acquires a SiC Company

    Today, Onsemi announced on its official website that it has reached an agreement with Qorvo to acquire the SiC JFET technology business and Qorvo's subsidiary.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

  • Advantages of TaC Coating in SiC Single Crystal Growth

    Currently, silicon carbide dominates the third generation of semiconductors. In the cost structure of silicon carbide devices, substrates account for 47%, and epitaxy contributes 23%. Together, these two components represent about 70% of the overall manufacturing cost, making them crucial in the silicon carbide device production chain.

  • What is Crystal Growth Furnace System

    The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

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