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    Graphite Chuck

    Semicorex Graphite Chuck is a crucial component in polysilicon manufacturing, widely used in the solar industry. As the demand for high-purity silicon wafers increases, the need for high-performance processing tools such as graphite chucks has become essential. Manufactured from high-purity specialty graphite, our graphite chucks are designed to withstand extreme temperatures, chemical exposure, and mechanical stresses while maintaining dimensional stability.*
  • TaC Coating Guide Rings

    TaC Coating Guide Rings

    TaC Coating Guide Rings are graphite ring with a tantalum carbide coating, designed for use in silicon carbide crystal growth furnaces to enhance crystal quality. Choose Semicorex for its advanced coating technology, ensuring superior durability, thermal stability, and optimized crystal growth performance.*
  • Tantalum Carbide Coating Chuck

    Tantalum Carbide Coating Chuck

    Semicorex Tantalum Carbide Coating Chuck is a precision-engineered component designed for use in high-temperature and high-stress environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Wafer Chuck

    Silicon Carbide Wafer Chuck

    The Semicorex Silicon Carbide Wafer Chuck is an essential component in the semiconductor epitaxial process. It serves as a vacuum chuck to securely hold wafers during critical manufacturing stages. We are committed to delivering top-quality products at competitive prices, positioning ourselves to be your long-term partner in China.*
  • Horizontal Chamber Furnace SiC boats

    Horizontal Chamber Furnace SiC boats

    Semicorex Horizontal Chamber Furnace SiC Boats are high-purity silicon carbide carrier designed for secure wafer holding during high-temperature horizontal furnace processing. Choosing Semicorex means benefiting from precise engineering, exceptional durability, and superior thermal performance for consistent, high-yield production.*
  • Microporous SiC Chuck

    Microporous SiC Chuck

    Semicorex Microporous SiC Chuck is a high-precision vacuum chuck designed for secure wafer handling in semiconductor processes. Choose Semicorex for our customizable solutions, superior material selection, and commitment to precision, ensuring optimal performance in your wafer processing needs.*
  • Related Blog
  • Reviews

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • How to do CMP Process

    In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

  • GaN Market Changes

    Silicon carbide (SiC) is currently facing challenges in the "price war," while gallium nitride (GaN) is emerging as a key player in the next technological battlefield.

  • What is isostatic graphite?

    Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

  • Quartz products in semiconductor applications

    In the semiconductor industry, quartz is widely used, and high-purity quartz products are even more important consumables in wafer production. The production of silicon single crystal crucibles, crystal boats, diffusion furnace core tubes, and other quartz components must use high-purity quartz glass products.

  • Can you grind silicon carbide?

    Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

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