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Our growth depends to the superior products ,great talents and repeatedly strengthened technology forces for SiC Coating MOCVD Susceptor,LPE With SiC Coating,Silicon Carbide SiC Coated for LPE,Durable SiC-Coated for LPE,SiC Coated for LPE, Our firm quickly grew in size and reputation because of its absolute dedication to superior quality manufacturing, substantial price of solutions and fantastic customer services.
SiC Coating MOCVD Susceptor, We have been persisting in the business essence "Quality First, Honoring Contracts and Standing by Reputations, providing customers with satisfying merchandise and service. " Friends both at home and abroad are warmly welcome to establish everlasting business relations with us.

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    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

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