English
Home > Products > Wafer susceptor

China Wafer susceptor Manufacturers, Suppliers, Factory

With our exceptional administration, robust technical capability and strict high-quality control procedure, we carry on to provide our consumers with dependable high-quality, reasonable selling prices and superb providers. We aim at becoming amongst your most responsible partners and earning your pleasure for Wafer susceptor,TaC coated graphite susceptor,CVD TaC,TaC coated susceptor,CVD TaC Coating, We warmly welcome good friends from all walks of life to cooperate with us.
Wafer susceptor, We care about every steps of our services, from factory selection, product development & design, price negotiation, inspection, shipping to aftermarket. Now we have implemented a strict and complete quality control system, which ensures that each product can meet quality requirements of customers. Besides, all of our solutions have been strictly inspected before shipment. Your Success, Our Glory: Our aim is to help customers realize their goals. We're making great efforts to achieve this win-win situation and sincerely welcome you to join us.

Related Products

Hot Products

  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.
  • GaN-on-SiC Epitaxial Wafers Carrier

    GaN-on-SiC Epitaxial Wafers Carrier

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our GaN-on-SiC Epitaxial Wafers Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Parts Abdeck Segmenten

    SiC Parts Abdeck Segmenten

    Semicorex SiC Parts Abdeck Segmenten, a crucial component in semiconductor device manufacturing that redefines precision and durability. Crafted from SiC coated graphite, these small yet essential parts play a pivotal role in advancing semiconductor processing to new levels of efficiency and reliability.
  • SiC Coated Ring

    SiC Coated Ring

    Semicorex SiC Coated Ring is a crucial component in the semiconductor epitaxial growth process, designed to meet the demanding requirements of modern semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Porous Graphite with TaC Coating

    Porous Graphite with TaC Coating

    Semicorex Porous Graphite with TaC Coating is a specialized material designed to address critical challenges in the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Epi-Wafer Susceptors

    SiC Epi-Wafer Susceptors

    Semicorex SiC epi-wafer susceptors made from SiC-coated graphite are engineered to provide exceptional thermal uniformity and chemical stability in high-temperature epitaxial growth processes. Semicorex is committed to delivering the highest-quality products and the best service to customers worldwide. With strong technical expertise and reliable manufacturing capabilities, we help global partners achieve stable performance and long-term value.*
  • Related Blog
  • Reviews

  • Different types of SiC ceramics

    Silicon carbide (SiC) ceramic is a type of advanced ceramic material known for its exceptional properties and wide range of applications. It is composed of silicon (Si) and carbon (C) atoms arranged in a crystal lattice structure, resulting in a hard and strong material with excellent thermal and electrical conductivity.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

  • Detailed Explanation of Semiconductor CVD SiC Process Technology(Part.Ⅱ)

    In the chemical vapor deposition (CVD) process, the gases used mainly include reactant gases and carrier gases. Reactant gases provide atoms or molecules for the deposited material, while carrier gases are used to dilute and control the reaction environment. Below are some commonly used CVD gases:

Related Search

8 inch Wafer SusceptorGraphite Wafer SusceptorsSiC Coated Graphite Wafer SusceptorSiC Graphite Wafer SusceptorsSiC Wafer SusceptorSiC wafer susceptors for MocvdSingle Wafer SusceptorSingle Wafer Susceptorswafer carrier;wafer susceptor;wafer holder;tantalum carbide;TaC coating;graphite plate;epitaxial growth;tantalum carbide tac;MOCVD;TaC-coated GraphiteWafer SusceptorWafer susceptors for MOCVD

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept