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Our products are extensively identified and reliable by consumers and will satisfy constantly developing economic and social desires for MOCVD Ceiling,MOCVD Reactor Susceptors,Veeco MOCVD Susceptor,SiC-Coated MOCVD Reactor Part,MOCVD Wafer Carriers, Special emphasis around the packaging of merchandise to avoid any damage during transportation,Detailed interest into the useful feedback and strategies of our esteemed shoppers.
MOCVD Ceiling, Our company always provides good quality and reasonable price for our customers. In our efforts, we already have many shops in Guangzhou and our solutions have won praise from customers worldwide. Our mission has always been simple: To delight our customers with best quality hair solutions and deliver on time. Welcome new and old customers to contact us for the future long term business relationships.

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    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

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    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

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    The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Nearly $840 Million: Onsemi Acquires a SiC Company

    Today, Onsemi announced on its official website that it has reached an agreement with Qorvo to acquire the SiC JFET technology business and Qorvo's subsidiary.

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