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We have now probably the most innovative production equipment, experienced and qualified engineers and workers, regarded high quality control systems and also a friendly expert income team pre/after-sales support for Veeco MOCVD,Silicon Carbide Wafers,Wafer Plate,Aixtron G5+,Epitaxial Thin Films, For even more inquires make sure you will not wait to make contact with us. Thank you - Your help continuously inspires us.
Veeco MOCVD, For many years, we now have adhered to the principle of customer oriented, quality based, excellence pursuing, mutual benefit sharing. We hope, with great sincerity and good will, to have the honor to help with your further market.

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    Semicorex SiC Sealing Part offers a blend of exceptional hardness, chemical resistance, and thermal stability, making it significant for demanding industrial applications. The advanced characteristics of SiC Sealing Part ensure durability, reliability, and efficiency, thereby enhancing the performance and longevity of the components.**
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  • Bronze Graphite Bushing

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    Semicorex bronze graphite bushing has the characteristics of high-load capacity, impact resistance, high-temperature resistance, strong self-lubrication ability, and can also withstand the erosion and scouring of corrosive liquids. This bronze graphite bushing is particularly suitable for equipment operating under complex working conditions where oil-free, high-temperature, high-load, low-speed, anti-fouling, anti-corrosion, and anti-radiation environment.
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    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

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    The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

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    Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

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