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    Semicorex Graphite Heater For Hot Zone, designed to operate reliably within high-temperature furnaces, are engineered to withstand the challenging conditions inherent to processes like chemical vapor deposition (CVD), epitaxy, and high-temperature annealing. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heater For Hot Zone that fuses quality with cost-efficiency.**
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    Semicorex PBN Crucibles are ultra-high purity, chemically inert containers ideal for high-temperature and vacuum applications. Choose Semicorex for unmatched material quality, precision engineering, and expert support trusted by industry leaders worldwide.*
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    Taiwan's Power Semiconductor Manufacturing Corporation (PSMC) has announced plans to build a 300mm wafer fab in Japan in collaboration with SBI Holdings. The purpose of this collaboration is to strengthen Japan's domestic IC (integrated circuit) supply chain, with a particular focus on circuits for AI edge computing and packaging technologies.

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    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

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    C/C composite is a carbon-carbon composite material made of carbon fibers as reinforcement and carbon as matrix through processing and carbonization, with excellent mechanical and high-temperature resistance properties. The material was initially used in aerospace and special fields, and with the maturity of the technology, it has been gradually used in photovoltaic, automotive, lithium battery, medical devices and other fields.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • SiC Single Crystal Substrate Processing

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