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  • Monocrystalline Silicon Epitaxial Susceptor

    Monocrystalline Silicon Epitaxial Susceptor

    Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Blue Green LED Epitaxial Susceptor

    Blue Green LED Epitaxial Susceptor

    Semicorex Blue Green LED Epitaxial Susceptors make the manufacture of high-quality LED wafers more efficient. We have been manufacturer and supplier of silicon carbide coated susceptor for many years. Our Blue Green LED Epitaxial Susceptor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Epitaxy Susceptor

    SiC Epitaxy Susceptor

    Crafted with precision and engineered for reliability, SiC Epitaxy Susceptor features high corrosion resistance, high thermal conductivity, resistance to thermal shock, and high chemical stability, enabling it to function effectively within an epitaxial atmosphere.Therefore, SiC Epitaxy Susceptor is considered a core and crucial component in MOCVD equipment. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Wafer Tray

    SiC Wafer Tray

    The Semicorex SiC Wafer Tray is a vital asset in the Metal-Organic Chemical Vapor Deposition (MOCVD) process, meticulously designed to support and heat semiconductor wafers during the essential step of epitaxial layer deposition. This tray is integral to semiconductor device manufacturing, where the precision of layer growth is of utmost importance. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Tray that fuse quality with cost-efficiency.
  • SiC Multi Pocket Susceptor

    SiC Multi Pocket Susceptor

    Semicorex SiC Multi Pocket Susceptor represents a critical enabling technology in the epitaxial growth of high-quality semiconductor wafers. Fabricated through a sophisticated Chemical Vapor Deposition (CVD) process, these susceptors provide a robust and high-performance platform for achieving exceptional epitaxial layer uniformity and process efficiency.**
  • SiC Epi-Wafer Susceptors

    SiC Epi-Wafer Susceptors

    Semicorex SiC epi-wafer susceptors made from SiC-coated graphite are engineered to provide exceptional thermal uniformity and chemical stability in high-temperature epitaxial growth processes. Semicorex is committed to delivering the highest-quality products and the best service to customers worldwide. With strong technical expertise and reliable manufacturing capabilities, we help global partners achieve stable performance and long-term value.*
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  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • Silicon Carbide Industry

    The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

  • Knowing GaN

    Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

  • What is Crystal Growth Furnace System

    The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

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