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  • SiC Coated Barrel Susceptor for Wafer Epitaxial

    SiC Coated Barrel Susceptor for Wafer Epitaxial

    The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
  • SiC-Coated Crystal Growth Susceptor

    SiC-Coated Crystal Growth Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Crystal Growth Susceptor is the ideal choice for use in single crystal growth applications. Its silicon carbide coating provides excellent flatness and heat distribution properties, making it an ideal choice for high-temperature environments.
  • SiC Susceptor for MOCVD

    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • Susceptor Plate

    Susceptor Plate

    Semicorex Susceptor Plate is a crucial component in the epitaxial growth process, specifically designed to carry semiconductor wafers during the deposition of thin films or layers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Support Ring

    SiC Coated Support Ring

    Semicorex SiC Coated Support Ring is an essential component used in the semiconductor epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Heaters

    SiC Coated Heaters

    Semicorex SiC Coated Heaters are CVD SiC-coated graphite heating components designed for semiconductor thermal fields, providing efficient heat generation, excellent corrosion resistance, and long-term reliability in high-temperature processing equipment. Semicorex supplies customized SiC-coated graphite heaters and complete thermal field solutions to semiconductor manufacturers worldwide, backed by advanced CVD coating technology, precision engineering, and dependable global delivery.*
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  • Coating in the thermal field of semiconductor silicon single crystals

    The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • Application of SiC and GaN in electric vehicles

    SiC MOSFETs are transistors that offer high power density, improved efficiency, and low failure rates at high temperatures. These advantages of SiC MOSFETs bring numerous benefits to electric vehicles (EVs), including longer driving range, faster charging, and potentially lower cost battery electric vehicles (BEVs). Over the past five years, SiC MOSFETs have been widely used in the power electronics of EVs in vehicles from OEMs such as Tesla and Hyundai. In fact, SiC inverters accounted for 28% of the BEV market in 2023.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Exploring the Future Prospects of Silicon Semiconductor Chips

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