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  • Ceramic Axle Sleeve

    Ceramic Axle Sleeve

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Ceramic Axle Sleeve has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coating Ring

    TaC Coating Ring

    Semicorex TaC Coating Ring stands as a pivotal component in the realm of monocrystal growth within the thermal field. Crafted with precision and innovation, this specialized guide ring plays a crucial role in the intricate process of monocrystalline material production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Zirconia ZrO2 Robot Arm

    Zirconia ZrO2 Robot Arm

    Semicorex Zirconia ZrO2 Robot Arm, a vital component in semiconductor processing for seamless wafer transfer and handling. Crafted to endure the rigorous demands of high-temperature, corrosive, and abrasive environments, this ceramic arm boasts unparalleled durability and reliability. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC ICP Etching Plate

    SiC ICP Etching Plate

    Semicorex SiC ICP Etching Plate is an advanced and indispensable component in the semiconductor industry, designed to enhance the precision and efficiency of etching processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Graphite Heating Industrial Element

    Graphite Heating Industrial Element

    Semicorex graphite heating industrial element is one of the most important parts of high-temperature vacuum sintering furnaces. It's essential for a variety of thermal processes due to their sophisticated material qualities.
  • SiC Mirrors

    SiC Mirrors

    Semicorex SiC Mirrors are high-performance silicon carbide optical components engineered for extreme precision in applications such as optic scan systems, lithography, and space-based telescopes. Choose Semicorex for our advanced manufacturing expertise, customizable designs, and exceptional surface finishing that ensure unmatched stability, reflectivity, and reliability in the most demanding environments.*
  • Related Blog
  • Reviews

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

  • Synthesizing High-Purity Silicon Carbide Powder

    High-Purity Silicon Carbide Powder features exceptional wide bandgap characteristics, which make it an ideal material for manufacturing high-frequency, high-power electronic devices.

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