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    C/SiC Ceramic Matrix Composites is a new type of thermal structure/functional integration material that combines the advantages of metal, ceramic and carbon materials, and has the characteristics of high-temperature resistance, low density, high strength ratio, high specific modulus, oxidation resistance, ablation resistance, insensitivity to cracks, and no catastrophic damage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • High-Temperature SiC Coating for Plasma Etch Chambers

    High-Temperature SiC Coating for Plasma Etch Chambers

    When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
  • Wafer Carrier Semiconductor

    Wafer Carrier Semiconductor

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Semiconductor for many years. Our Wafer Carrier Semiconductor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Refined Graphite Mold

    Refined Graphite Mold

    Semicorex Refined Graphite Mold is a versatile and efficient tool in various industrial casting and molding processes. Its high purity, low thermal expansion, and excellent surface finish make it a preferred choice for applications requiring precision and quality.
  • Alumina Insulation Ring

    Alumina Insulation Ring

    Semicorex Alumina Insulation Ring is employed as an insulator in various electrical components, its excellent electrical insulation properties ensures reliable performance in applications where preventing electrical conduction is essential.
  • Isostatic Graphite

    Isostatic Graphite

    Semicorex provides high-quality isostatic graphite with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • The unit in semiconductor: Angstrom

    As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor technology.

  • The Application Prospects of 12-Inch Silicon Carbide Substrates

    Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Chip shortage continues to be a problem

    While there is currently an oversupply of memory semiconductors due to a sluggish global economy, analog chips for automotive and industrial applications remain in short supply. Lead times for these analog chips can be as long as 40 weeks, compared to around 20 weeks for memory stocks.

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