China cvd sic process Manufacturers, Suppliers, Factory

Currently, many semiconductor devices employ mesa device structures, which are predominantly created through two types of etching: wet etching and dry etching. While the simple and rapid wet etching plays a significant role in semiconductor device fabrication, it has inherent drawbacks such as isotropic etching and poor uniformity, which result in limited control when transferring small-sized patterns. Dry etching, however, with its high anisotropy, good uniformity, and repeatability, has become prominent in semiconductor device fabrication processes. The term “dry etching” broadly refers to any non-wet etching technology used for removing surface materials and transferring micro and nano patterns, including laser etching, plasma etching, and chemical vapor etching. The dry etching discussed in this text specifically pertains to the narrow application of processes using plasma discharge—either physical or chemical—to modify material surfaces.

Carbon/carbon composite materials refer to composite materials composed of carbon fiber reinforcement and carbon-based matrix. They have the characteristics of low density, high strength, high specific modulus, low thermal expansion coefficient, etc. Their super high temperature resistance makes them the most promising high-temperature material.

Doping involves introducing a dose of impurities into semiconductor materials to alter their electrical properties. Diffusion and ion implantation are two methods of doping. Early impurity doping was primarily accomplished through high-temperature diffusion.

In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process.

Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.