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Introducing Gallium Oxide(Ga2O3)

2024-01-24

Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.


(I) Fourth-generation Semiconductor Material

The first generation of semiconductors refers to elements like silicon (Si) and germanium (Ge). The second generation includes higher-mobility semiconductor materials like gallium arsenide (GaAs) and indium phosphide (InP). The third generation encompasses wide-bandgap semiconductor materials like silicon carbide (SiC) and gallium nitride (GaN). The fourth generation introduces ultra-wide bandgap semiconductor materials like gallium oxide (Ga2O3), diamond (C), aluminum nitride (AlN), and ultra-narrow bandgap semiconductor materials like gallium antimonide (GaSb) and indium antimonide (InSb).

Fourth-generation ultra-wide bandgap materials have overlapping applications with third-generation semiconductor materials, with a prominent advantage in power devices. The core challenge in fourth-generation materials lies in material preparation, and overcoming this challenge holds significant market value.

(II) Properties of Gallium Oxide Material

Ultra-wide bandgap: Stable performance in extreme conditions like ultra-low and high temperatures, strong radiation, with corresponding deep ultraviolet absorption spectra applicable to blind ultraviolet detectors.

High breakdown field strength, high Baliga value: High voltage resistance and low losses, making it indispensable for high-pressure high-power devices.


Gallium oxide challenges silicon carbide:

Good power performance and low losses: Baliga figure of merit for gallium oxide is four times that of GaN and ten times that of SiC, exhibiting excellent conduction characteristics. Power losses of gallium oxide devices are 1/7th of SiC and 1/49th of silicon-based devices.

Low processing cost of gallium oxide: Gallium oxide's lower hardness compared to silicon makes processing less challenging, while SiC's high hardness leads to significantly higher processing costs.

High crystal quality of gallium oxide: Liquid-phase melt growth results in a low dislocation density (<102cm-2) for gallium oxide, whereas SiC, grown using a gas-phase method, has a dislocation density of approximately 105cm-2.

Growth rate of gallium oxide is 100 times that of SiC: Liquid-phase melt growth of gallium oxide achieves a growth rate of 10-30mm per hour, lasting 2 days for a furnace, while SiC, grown using a gas-phase method, has a growth rate of 0.1-0.3mm per hour, lasting 7 days per furnace.

Low production line cost and quick ramp-up for gallium oxide wafers: Gallium oxide wafer production lines share high similarity with Si, GaN, and SiC wafer lines, resulting in lower conversion costs and facilitating the rapid industrialization of gallium oxide.


Semicorex offers high-quality 2’’ 4’’ Gallium oxide (Ga2O3) wafers. If you have any inquiries or need additional details, please don't hesitate to get in touch with us.


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