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China Satellite Platforms for MOCVD Manufacturers, Suppliers, Factory

Sticking to the perception of "Creating products of top of the range and earning mates with people today from all over the world", we constantly put the desire of consumers in the first place for Satellite Platforms for MOCVD,Graphite Susceptor,MOCVD Graphite Boat,MOCVD Epitaxial SiC Tray,MOCVD Reactors Susceptors, We sincerely welcome mates to negotiate organization and start cooperation. We hope to affix hands with good friends in different industries to produce a fantastic long term.
Satellite Platforms for MOCVD, we rely on own advantages to build a mutual-benefit commerce mechanism with our cooperative partners. As a result, we've gained a global sales network reaching the Middle East, Turkey, Malaysia and Vietnamese.

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  • N-type Silicon Carbide Powder

    N-type Silicon Carbide Powder

    Semicorex N-type Silicon Carbide powder (SiC) is a high-purity, doped SiC material specifically designed for advanced crystal growth applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Semiconductor SiC Components for Epitaxial

    Semiconductor SiC Components for Epitaxial

    Enhance the capabilities and efficiency of your semiconductor equipment with our groundbreaking Semiconductor SiC Components for Epitaxial. These semi-cylindrical components are specifically engineered for the intake section of epitaxial reactors, playing a crucial role in optimizing semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Wafer Chuck

    SiC Wafer Chuck

    Semicorex SiC Wafer Chuck stands as a pinnacle of innovation in semiconductor manufacturing, serving as a crucial component in the intricate process of semiconductor fabrication. Crafted with meticulous precision and cutting-edge technology, this chuck plays an indispensable role in supporting and stabilizing silicon carbide (SiC) wafers during various stages of production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • RTP Ring

    RTP Ring

    Semicorex RTP Ring is a SiC-coated graphite ring designed for high-performance applications in Rapid Thermal Processing (RTP) systems. Choose Semicorex for our advanced material technology, ensuring superior durability, precision, and reliability in semiconductor manufacturing.*
  • Silicon Boats

    Silicon Boats

    Semicorex Silicon Boats are high-purity silicon carriers designed for crystal growth, semiconductor, and photovoltaic manufacturing processes, providing exceptional thermal stability and contamination control. Choosing Semicorex means accessing precision-engineered boats made under strict quality control to ensure consistent performance in the most demanding environments.*
  • Wafer Holder for ICP Etching Process

    Wafer Holder for ICP Etching Process

    Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.
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  • Reviews

  • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

    Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

  • What is Diffusion Process

    Doping involves introducing a dose of impurities into semiconductor materials to alter their electrical properties. Diffusion and ion implantation are two methods of doping. Early impurity doping was primarily accomplished through high-temperature diffusion.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • Advantages of SiC in EV industry

    As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

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SiC Coated Graphite Satellite Platforms for MOCVD

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