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China Satellite Platforms for MOCVD Manufacturers, Suppliers, Factory

Sticking to the perception of "Creating products of top of the range and earning mates with people today from all over the world", we constantly put the desire of consumers in the first place for Satellite Platforms for MOCVD,Graphite Susceptor,MOCVD Graphite Boat,MOCVD Epitaxial SiC Tray,MOCVD Reactors Susceptors, We sincerely welcome mates to negotiate organization and start cooperation. We hope to affix hands with good friends in different industries to produce a fantastic long term.
Satellite Platforms for MOCVD, we rely on own advantages to build a mutual-benefit commerce mechanism with our cooperative partners. As a result, we've gained a global sales network reaching the Middle East, Turkey, Malaysia and Vietnamese.

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  • MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • ICP Plasma Etching Tray

    ICP Plasma Etching Tray

    Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • 12-inch Semi-Insulating SiC Substrates

    12-inch Semi-Insulating SiC Substrates

    Semicorex 12-inch Semi-Insulating SiC Substrates are next-generation material designed for high-frequency, high-power, and high-reliability semiconductor applications. Choosing Semicorex means partnering with a trusted leader in SiC innovation, committed to delivering exceptional quality, precision engineering, and customized solutions to empower your most advanced device technologies.*
  • Silicon Carbide Ceramic Structural Parts

    Silicon Carbide Ceramic Structural Parts

    Semicorex Silicon Carbide Ceramic Structural Parts, gained from grains of silicon carbide bonded together by sintering, find extensive usage in the automotive, mechanical, chemical, semiconductor, space technology, microelectronics, and energy sectors, fulfilling critical roles in diverse applications across these industries. Due to their remarkable properties, Silicon Carbide Ceramic Structural Parts have become an ideal material for harsh conditions characterized by high temperatures, high pressures, corrosion, and abrasion, providing reliable performance and longevity in challenging operational environments.**
  • 8 inch EPI Top Ring

    8 inch EPI Top Ring

    Semicorex 8 inch EPI Top Ring is a SiC coated graphite component designed for use as the upper cover ring in epitaxial growth systems. Choose Semicorex for its industry-leading material purity, precise machining, and consistent coating quality that ensure stable performance and extended component life in high-temperature semiconductor processes.*
  • SiC Coated Waferholder

    SiC Coated Waferholder

    Semicorex SiC Coated Waferholder is a high-performance component designed for the precise placement and handling of SiC wafers during epitaxy processes. Choose Semicorex for its commitment to delivering advanced, reliable materials that enhance the efficiency and quality of semiconductor manufacturing.*
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  • Advantages of TaC Coating in SiC Single Crystal Growth

    Currently, silicon carbide dominates the third generation of semiconductors. In the cost structure of silicon carbide devices, substrates account for 47%, and epitaxy contributes 23%. Together, these two components represent about 70% of the overall manufacturing cost, making them crucial in the silicon carbide device production chain.

  • PECVD Process

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used technology in chip manufacturing. It utilizes the kinetic energy of electrons within plasma to activate chemical reactions in the gas phase, thereby achieving thin-film deposition.

  • Substrate and Epitaxy

    In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

  • TaC coated crucible in SiC crystal growth

    TaC coated crucibles have become an important technical solution as reaction vessels in the growth process of silicon carbide (SiC) crystals.

  • The Impact of Temperature on CVD-SiC Coatings

    Chemical Vapor Deposition (CVD) is a versatile technique for producing high-quality coatings with various applications in industries such as aerospace, electronics, and materials science. CVD-SiC coatings are known for their exceptional properties, including high temperature resistance, mechanical strength, and excellent corrosion resistance.

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

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SiC Coated Graphite Satellite Platforms for MOCVD

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