Home > Products > Silicon Carbide Coated > Barrel Susceptor > Barrel Structure for Semiconductor Epitaxial Reactor
Barrel Structure for Semiconductor Epitaxial Reactor

Barrel Structure for Semiconductor Epitaxial Reactor

With its exceptional thermal conductivity and heat distribution properties, the Semicorex Barrel Structure for Semiconductor Epitaxial Reactor is the perfect choice for use in LPE processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments.

Send Inquiry

Product Description

The Semicorex Barrel Structure for Semiconductor Epitaxial Reactor is the go-to choice for high-performance graphite susceptor applications that require exceptional heat and corrosion resistance. Its high-purity SiC coating and superior density and thermal conductivity provide superior protection and heat distribution properties, ensuring reliable and consistent performance in even the most challenging environments.

Our Barrel Structure for Semiconductor Epitaxial Reactor is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.

Contact us today to learn more about our Barrel Structure for Semiconductor Epitaxial Reactor.


Parameters of Barrel Structure for Semiconductor Epitaxial Reactor

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of Barrel Structure for Semiconductor Epitaxial Reactor

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.






Hot Tags: Barrel Structure for Semiconductor Epitaxial Reactor, China, Manufacturers, Suppliers, Factory, Customized, Bulk, Advanced, Durable

Related Category

Send Inquiry

Please feel free to give your inquiry in the form below. We will reply you in 24 hours.
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept