English
Home > Products > MOCVD Epitaxial Growth

China MOCVD Epitaxial Growth Manufacturers, Suppliers, Factory

We're convinced that with joint initiatives, the business between us will bring us mutual benefits. We can easily guarantee you merchandise good quality and competitive rate for MOCVD Epitaxial Growth,Silicon Carbide,Epitaxial Growth,Silicon Wafer Manufacturing Companies,Single Crystalline Silicon, President of our company, with whole staff, welcomes all buyers to visit our company and inspect. Let us cooperate hand in hand to make a good future.
MOCVD Epitaxial Growth, Abiding by our motto of "Hold well the quality and services, Customers Satisfaction", So we provide our clients with high quality products and excellent service. Please feel free to contact us for further information.

Related Products

Hot Products

  • Semiconductor Quartz Ring

    Semiconductor Quartz Ring

    Semicorex Semiconductor Quartz Ring stands as an indispensable component within the intricate realm of semiconductor processing. Crafted with precision and engineered for reliability, this ring serves as a crucial interface between various stages of semiconductor fabrication, ensuring optimal performance and efficiency throughout the process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Quartz Fin Pedestal

    Quartz Fin Pedestal

    Semicorex Semicorex Quartz Fin Pedestal, the indispensable component for enhancing stability and maneuverability in pedestal boats. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 6 Inch N-type SiC Wafer

    6 Inch N-type SiC Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our double-polished 6 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Quartz Tank for Wet Processing

    Quartz Tank for Wet Processing

    Semicorex Quartz Tank for Wet Processing, also known as quartz bath, is particularly critical in wet processes used for wafer fabrication.**
  • SiC Wafer Carrier in Semiconductor

    SiC Wafer Carrier in Semiconductor

    Semicorex SiC Wafer Carrier in Semiconductor, is a specialized tool used in the handling and processing of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Furnace Tube

    SiC Furnace Tube

    Semicorex SiC Furnace Tube is an indispensable asset for semiconductor manufacturers aiming to enhance their diffusion processes. With its unparalleled material properties, precision design, and ease of use, our SiC Furnace Tube is the ideal solution for improving yield and product quality. Trust Semicorex to provide the cutting-edge solutions you need to excel in the fast-paced semiconductor landscape.*
  • Related Blog
  • Reviews

  • Why does quartz need to be annealed

    According to processing method, use, and appearance, quartz glass is classified into two categories: transparent and opaque. The transparent category includes types such as fused transparent quartz glass, fused quartz glass, gas-refined transparent quartz glass, and synthetic quartz glass.

  • What is SOI

  • Purification Technology of Graphite in SiC semiconductor

    Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • GaN and SiC: Coexistence or Substitution?

    The push for higher power density and efficiency has become a primary driver of innovation across multiple industries, including data centers, renewable energy, consumer electronics, electric vehicles, and autonomous driving technologies. In the realm of wide bandgap (WBG) materials, Gallium Nitride (GaN) and Silicon Carbide (SiC) are currently the two core platforms, viewed as pivotal tools leading power semiconductor innovation. These materials are profoundly transforming the power electronics industry to address the ever-increasing demand for power.

  • Introduction to Silicon Carbide Power Devices

    Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept